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RESEARCH PRODUCT
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
P. MehtäläJ. NystenEsa TuovinenI. RiihimäkiEija TuominenP. LuukkaFrank HartmannS. NummelaKati Lassila-periniD. UngaroAri VirtanenAlexander FurgeriA. ZibelliniJaakko HärkönenP. Laitinensubject
PhysicsNuclear and High Energy PhysicsSiliconbusiness.industryDetectorchemistry.chemical_elementRadiationchemistryElectrical resistivity and conductivityOptoelectronicsWaferIrradiationbusinessInstrumentationDiodeLeakage (electronics)description
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-09-01 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |