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RESEARCH PRODUCT

Arsenic diffusion in relaxedSi1−xGex

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The intrinsic As diffusion properties have been determined in relaxed ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ epilayers. The properties were studied as a function of composition x for the full range of materials with $x=0,$ 0.20, 0.35, 0.50, 0.65, 0.8, and 1. The activation enthalpy ${E}_{a}$ was found to drop systematically from 3.8 eV $(x=0)$ to 2.4 eV $(x=1).$ Comparisons with other impurity atom- and self-diffusion results in Si, Ge, and SiGe show that both interstitials and vacancies contribute as diffusion vehicles in the composition range $0l~xl~0.35$ and that vacancy mechanism dominates diffusion in the composition range $0.35lxl~1.$