0000000000061694
AUTHOR
Jyrki Räisänen
4He+Ni elastic scattering near the Coulomb barrier and optical model parameters
Cross sections for the elastic scattering system of 4He+Ni have been investigated. Natural nickel was bombarded by 4He ions in the laboratory energy range of 3.0–14.3 MeV and the intensity of helium backscattering through laboratory angles of 96°, 117°, and 137° was observed. From measured yield data, the cross sections were extracted for the direct Ni(4He,4He)Ni scattering process as well as for the inverse recoil scattering process 4He(58Ni,4He)58Ni by calculating the kinematical reversal of the reaction. The experimental helium scattering angles convert to helium recoil angles of 20°, 30°, and 40°, and the incident helium ion energies to 43.5–207 MeV for incident 58Ni ions in the reverse…
Stopping powers of havar and effective charge for 1.4–3.2 MeV/u 127I-ions
Abstract Stopping powers of havar for 1.4–3.2 MeV/u 127 I-ions have been determined by the transmission technique using two geometrical arrangements. No previous data have been published for havar with this ion. The experimental data are compared with predictions obtained by using Bragg’s additivity rule with various parametrizations of the stopping power found in the literature. The values obtained by the parametrizations underestimate the experimental data by 5–11%. The empirical correction scheme of Thwaites yields values in rather good agreement with the present results, especially at energies above 1.9 MeV/u. The effective charges of the 127 I ions were also deduced from the experiment…
New approach to energy loss measurements
Abstract A new approach to energy loss measurements is proposed. In the same experiment electronic stopping force (power) in gold, nickel, carbon, polycarbonate and Havar for 40 Ar, 28 Si, 16 O, 4 He and 1 H ions in the energy range 0.12–11 MeV/u has been measured. In this paper we give the full results for gold, nickel, and carbon and for 40 Ar, 16 O, 4 He and 1 H ions. Good agreement of the measured stopping force values for light ions with literature data is interpreted as the positive test of the experimental technique. The same technique used with heavy ions yields agreement with the published data only for energies above 1 MeV/u. At lower energies we observe progressively increasing d…
Retention of Pb isotopes in glass surfaces for retrospective assessment of radon exposure
Abstract In recent years there has been increasing interest in radio-epidemiological techniques to retrospectively measure the radon dose exposure by determining the activity of 210Pb, the longest-lived 222Rn progeny, in glass surface layers. In this study the diffusion of 39 keV 209Pb+ ions implanted into glass using the IGISOL facility has been studied under conditions that mimic the recoil implantation of 210Pb from 222Rn. The resulting depth distributions of 209Pb were then measured after heat treatment in vacuum at different temperatures by a sputter erosion technique. The diffusion coefficient could be described by an Arrhenius equation D = D0exp(−H/kT) where D 0 = 0.30 - 0.24 + 1.14 …
Stopping cross-section measurements of 4He in TiN1.1O0.27
Abstract The stopping cross-section for 4He projectiles in TiNx compounds has been measured using the backscattering method. A multi-compound marker layer deposited between the test film and the substrate was used to obtain the stopping cross-section at several energies with one energy of the incident beam. Two RBS spectra at definite tilt angles of the sample are taken for each beam energy. The assistance of computer codes to synthesize RBS spectra is very useful to obtain the pertinent information from the displacements of the peaks of the marker layers. Stopping cross-section values are obtained with an estimated uncertainty of about 6%.
Critical temperature modification of low dimensional superconductors by spin doping
Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe concentration. it was found that suppression by Mn implantation much stronger compared to Fe. At low concentrations of implanted ions, suppression of the critical temperature can be described with reasonable accuracy by existing models, while at concentrations above 0.1 at.% a pronounced discrepancy between the models and experiments is observed.
Migration kinetics of ion-implanted beryllium in glassy carbon
Abstract Migration kinetics of low-concentration implanted 7 Be in glassy carbon has been studied by the modified radiotracer technique at temperatures 1285 °C and 1340 °C. The annealed sample concentration profiles show two distinctive components: (i) Main profile broadening assigned to beryllium trapping in defects during annealing. (ii) Tail parts on both sides of the profile maximum related to faster migration. Of the latter the profile representing bulk diffusion lies on the region free of defect influence and is well described by concentration-independent diffusivity. The features of the concentration profile broadening towards the sample surface indicate partial Be trapping in defect…
Self-diffusion of silicon in molybdenum disilicide
The self-diffusion of silicon in single crystal MoSi2 was studied by means of a radiotracer technique using the short-lived radioisotope 31Si (half-life ), which was produced and implanted into the samples at the ion-guide isotope separator on-line device at the University of Jyvaskyla in Finland. Diffusion annealing and subsequent serial sectioning of the specimens were performed immediately after the radiotracer implantation. In the entire temperature region investigated (835–1124 K), the 31Si diffusivities in both principal directions of the tetragonal MoSi2 crystals obey Arrhenius laws, where the diffusion perpendicular to the tetragonal axis is faster than parallel to it. In previous s…
Elastic scattering cross sections for 6Li and 7Li scattering by aluminum, silicon and titanium below 12 MeV at angles of 140∘ and 170∘
Abstract Elastic scattering cross sections for 6Li and 7Li scattering by natural aluminum, silicon and titanium have been measured in the energy range of 4–11 MeV. Scattering angles were 140∘ and 170∘ for 6Li and 140∘ for 7Li. The threshold energies above which Rutherford backscattering becomes invalid have been determined. Above this threshold the cross sections decrease rapidly, rendering backscattering analysis impractical. For 7Li scattering by Al and Si the observed threshold values were higher than for 6Li scattering. This behavior was reversed for scattering by Ti. The findings were systematic for both scattering angles. The present cross section and threshold data have been compared…
RBS and ERD cross-sections and optical model parameters for the analysis of lithium, boron and nickel
Abstract Elastic scattering cross-sections for RBS analysis of nickel by 7 Li and 11 B ion backscattering near the Coulomb barrier have been determined. The lithium ion measurements were performed in the energy range of 8–15 MeV at the laboratory angles of 115° and 135°. For boron ions the energies between 14 and 24 MeV and scattering angles of 89°, 110° and 130° were used. For the analysis of lithium and boron by ERD the scattering cross-sections have been calculated by kinematically reversing the backscattering process. The calculated 58 Ni ion energies thus varied between 65 and 125 MeV for lithium and between 75 and 130 MeV for boron recoils. For the Li + Ni and B + Ni systems the thres…
New experimental molecular stopping cross section data of Al2O3, for heavy ions
Abstract Molecular stopping cross section data of Al2O3, for heavy ions of 12C, 16O, 28Si, 35Cl, 79Br within the energy range of 0.01–1.0 MeV/nucleon were measured. Both direct transmission and bulk analysis methods were applied. Stopping cross sections were calculated both with the SRIM and MSTAR codes. Evaluation and intercomparison of the new data with the calculated and previously measured ones are reported in this paper.
A novel method for obtaining continuous stopping power curves
Abstract A new method has been developed for obtaining continuous stopping power curves in transmission geometry. In the method both the incident energy of the particle and its energy after passing through the sample foil are extracted directly from the semiconductor detector. Full range of energies is measured simultaneously eliminating step-by-step measurements and providing continuous data. A time-of-flight (TOF) spectrometer provides unambiguous matching of relevant particle groups from the run with and without absorber. Suitable energy distribution of incident particles was achieved by choosing the right thickness and tilting angle of a scattering foil. The method is very fast and reli…
Composition dependence ofSi1−xGexsputter yield
Sputtering yields have been measured for unstrained ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ $(x=0--1)$ alloys when bombarded with ${\mathrm{Ar}}^{+}$ ions within the linear cascade regime. Nonlinear S-shape dependence of the sputter yield as a function of the alloy composition has been revealed. The dependence is analyzed within the frameworks of the cascade theory conventionally accepted to be the most systematic to date theoretical approach in sputtering. In view of a linear composition dependence predicted for the sputter yield by the cascade theory adapted for polyatomic substrates, the nonlinearity observed in our experiments is shown to be related to the alloying effect on…
Analysis of measurements of stopping powers of formvar, polyimide, polysulfone, and vyns for 3.6 to 10.5 MeV7Li ions
The stopping powers of formvar, polysulfone, polyimide, and vyns for 7Li projectiles have been measured with the transmission technique and thin foil targets. The experimental data have been analyzed in terms of modified Bethe–Bloch theory to extract characteristic values of the mean excitation energy and Barkas effect parameter, as well as to study the effects of including a single effective charge parameter. Results of this investigation are in general supportive of the outcomes of earlier similar studies with protons and α-particles traversing the same target materials in the sense that previously reported trends in projectile-dependent behavior of values of mean excitation energy and Ba…
Detection system for depth profiling of radiotracers
A reliable and efficient detection system essentially needed in the depth profiling of radiotracers consisting of two large PIN-diode arrays has been constructed. The requirements put forward to the detector system and the ability of the PIN-diode array to meet these demands are discussed. A comparison to a conventionally used liquid scintillation detector is presented by measuring an as-implanted 31Si profile in amorphous T21 ceramic by both apparatuses.
Determination of molecular stopping cross section of 12C, 16O, 28Si, 35Cl, 58Ni, 79Br, and 127I in silicon nitride
Abstract Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si3N4, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the io…
Annealing behaviour of aluminium-implanted InP
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Slowing down of 1.3–3.5 MeV/u Fe, Kr and I ions in ten metals
Abstract Stopping powers for 1.3–3.5 MeV/u 56 Fe, 80, 84 Kr and 127 I ions in Mg, V, Fe, Co, Ni, Cu, Nb, Sn, Ta and Au have been determined by a transmission technique exposing the metallic sample foils to the direct ion beam. No previous data have been published for Mg, V, Fe, Co, Nb, Sn or Ta stopping media with these ion energies. The experimental results are compared with parametrizations of the stopping powers found in the literature (SRIM-2000 and Hubert’s parametrization). Discrepancies as high as 21 and 16% are observed for SRIM and Hubert’s parametrization, respectively. However, there is agreement between the present results and other experimental data available at corresponding i…
Stopping powers of havar for 1.6, 2.3 and 3.2 MeV/u heavy ions
Abstract Stopping powers of havar for 28,30 Si-, 36 Ar-, 54,56 Fe- and 80,84 Kr-ions with energies of 1.6, 2.3 and 3.2 MeV/u have been determined by a transmission technique. Sample foils are exposed to the direct beams. No previous data for havar with these ions have been published. The obtained results are brought together with literature havar data for 1 H-, 4 He-, 7 Li-, 11 B-, 12 C-, 14 N-, 16 O- and 127 I-ions at the same ion velocity. The experimental data are compared with the values predicted by the SRIM-2000 parametrization using Bragg’s rule. A systematic underestimation, by 6–23%, of the experimental stopping powers was observed. The empirical correction scheme of Thwaites has b…
Simultaneous wide-range stopping power determination for several ions
A new procedure to extract simultaneously continuous stopping power curves for several ions and several absorbers over a wide energy range and with statistical errors reduced to negligible level is presented. The method combines our novel time-of-flight based method with the capability of our K130 cyclotron and ECR ion-source to produce the so-called ion cocktails. The potential of the method is demonstrated with a 6.0 MeV/u cocktail consisting of 16O4+, 28Si7+ and 40Ar10+ ions. The stopping power in polycarbonate in the energy range of 0.35–5 MeV/u has been determined with absolute uncertainty of less than 2.3% and with relative below 0.2%. The results are compared with literature data and…
On erbium lattice location in ion implanted Si0.75Ge0.25 alloy
A high crystalline quality Si0.75Ge0.25 alloy layer grown by chemical vapor deposition was implanted with 70 keV Er+ ions to a fluence of 1015 cm−2 at temperature of 550 °C. The implantation was found to result in an Er depth distribution with 1 at. % maximum concentration 30 nm beneath the surface. The location of the erbium atoms in the host matrix lattice is derived through computer simulation of experimental axial channeling angular scans measured by in situ Rutherford backscattering/channeling spectrometry. Using computer code FLUX 7.7 it is shown that 60% of the implanted erbium atoms are located at ytterbium sites, 10% at tetrahedral sites, and the remainder are associated with rando…
Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry
A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…
Plasma-wall interaction studies within the EUROfusion consortium: Progress on plasma-facing components development and qualification
This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission.
Versatile use of ion beams for diffusion studies by the modified radiotracer technique
Abstract In the modified radiotracer technique ion beams within a broad energy range are employed. They include energetic light particles ensuring radioactive isotope production via nuclear reactions, keV-ion implantation of radiotracers and sputtering by low energy heavy ions for depth profiling. If the involved ion–solid interactions are properly taken into account, the technique provides an effective means for solid-state diffusion studies under demanding conditions. The various aspects related to the modified radiotracer technique are surveyed and discussed. The reliability of the procedure is demonstrated by comparisons with corresponding profiles obtained by secondary ion mass spectro…
High-Fluence Implantation of Erbium into Silicon-Germanium Alloys: Structural and Thermal Properties
AbstractHigh-quality crystalline Si1-xGex (x=0.10 and 0.25) alloys were implanted with 70 keV Er+ ions at temperatures of 350°C and 550°C to a fluence of 1015 cm−2. In-situ Rutherford backscattering/channeling (RBS) analysis supplemented with transmission electron microscopy (TEM) showed that as-implanted alloys were in form of ternary solid solutions with a peak Er concentration of 1 at.% without any trace of Er-Si or Er-Ge precipitation.In the samples implanted at 350°C Er atoms were found to be distributed randomly in the amorphous host matrix. Post-implantation annealing at different temperatures up to 600° showed that the solid phase epitaxial regrowth of the damaged layers strongly de…
Si self-diffusion in cubic B20-structured FeSi
Self-diffusion of implanted 31Si in the e-phase FeSi (cubic B20-structure) has been determined in the temperature range 660–810 °C using the modified radiotracer technique. With an activation enthalpy of 2.30 eV and a pre-exponential factor of 15×10−8 m2 s−1 the silicon diffusivity was found to be slightly slower than Ge impurity diffusion in FeSi. This difference is proposed to originate from attractive elastic interactions prevailing between the slightly oversized Ge atoms and the Si sublattice vacancies. The results confirm the argument that 71Ge radioisotopes may be used to substitute the short-lived 31Si radiotracers when estimating self-diffusion in silicides.
Lattice sites of diffused gold and platinum in epitaxial ZnSe layers
Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …
Utilisation of a sputtering device for targetry and diffusion studies
A novel device for versatile sputtering applications is described. The apparatus design is realised for fulfilling the demands of both nuclear physics experiment target production and serial sectioning in solid-state diffusion studies with radiotracers. Results of several tests are reported, characterising the devise performance in these two differing applications.
Arsenic diffusion in relaxedSi1−xGex
The intrinsic As diffusion properties have been determined in relaxed ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$ epilayers. The properties were studied as a function of composition x for the full range of materials with $x=0,$ 0.20, 0.35, 0.50, 0.65, 0.8, and 1. The activation enthalpy ${E}_{a}$ was found to drop systematically from 3.8 eV $(x=0)$ to 2.4 eV $(x=1).$ Comparisons with other impurity atom- and self-diffusion results in Si, Ge, and SiGe show that both interstitials and vacancies contribute as diffusion vehicles in the composition range $0l~xl~0.35$ and that vacancy mechanism dominates diffusion in the composition range $0.35lxl~1.$
Superconductivity suppression in Fe-implanted thin Al films
At present, ion implantation into metallic systems is given increasing attention, aiming at achieving properties and functionalities of technologically valuable materials not easily available via conventional techniques. In our experiments thin Al films were implanted with Fe ions in order to find out how the superconductive properties of the metal can be modified at will. The purpose was twofold, viz., first, to study the basic physics of superconductivity in low-dimensional metallic structures doped with impurities. The second purpose was to apply ion implantation for the suppression of undesired superconductivity in aluminum widely used for fabrication of micro- and nanodevices operated …