6533b86cfe1ef96bd12c7f3b
RESEARCH PRODUCT
Si self-diffusion in cubic B20-structured FeSi
Helmut MehrerMarcel SalamonJyrki RäisänenI. RiihimäkiAri VirtanenPetteri Pusasubject
Self-diffusionMaterials scienceSiliconCondensed matter physicsEnthalpyGeneral Physics and Astronomychemistry.chemical_element02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyThermal diffusivity01 natural scienceschemistryImpurity diffusion0103 physical sciences010306 general physics0210 nano-technologydescription
Self-diffusion of implanted 31Si in the e-phase FeSi (cubic B20-structure) has been determined in the temperature range 660–810 °C using the modified radiotracer technique. With an activation enthalpy of 2.30 eV and a pre-exponential factor of 15×10−8 m2 s−1 the silicon diffusivity was found to be slightly slower than Ge impurity diffusion in FeSi. This difference is proposed to originate from attractive elastic interactions prevailing between the slightly oversized Ge atoms and the Si sublattice vacancies. The results confirm the argument that 71Ge radioisotopes may be used to substitute the short-lived 31Si radiotracers when estimating self-diffusion in silicides.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-06-01 | EPL (Europhysics Letters) |