6533b820fe1ef96bd12798d2
RESEARCH PRODUCT
Particle Detectors made of High Resistivity Czochralski Grown Silicon
P. HeikkilaEsa TuovinenE. M. VerbitskayaAndrew IvanovJ. NystenAri VirtanenZ. LiVictor OvchinnikovI. RiihimäkiJaakko HärkönenKati Lassila-periniV. K. EreminMarko Yli-koskiEija TuominenP. LaitinenPanja-riina Luukkasubject
Materials scienceFabricationSiliconHybrid silicon laserbusiness.industrychemistry.chemical_elementCarrier lifetimeFloat-zone siliconCondensed Matter PhysicsAtomic and Molecular Physics and OpticsMonocrystalline siliconchemistryOptoelectronicsWaferbusinessRadiation hardeningMathematical Physicsdescription
We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-01-01 | Physica Scripta |