0000000000464926
AUTHOR
P. Heikkila
showing 5 related works from this author
Particle Detectors made of High Resistivity Czochralski Grown Silicon
2004
We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons
2004
Abstract We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
2002
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
2003
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
Pathology of Breast and Ovarian Cancers among BRCA1 and BRCA2 Mutation Carriers: Results from the Consortium of Investigators of Modifiers of BRCA1/2…
2012
Abstract Background: Previously, small studies have found that BRCA1 and BRCA2 breast tumors differ in their pathology. Analysis of larger datasets of mutation carriers should allow further tumor characterization. Methods: We used data from 4,325 BRCA1 and 2,568 BRCA2 mutation carriers to analyze the pathology of invasive breast, ovarian, and contralateral breast cancers. Results: There was strong evidence that the proportion of estrogen receptor (ER)-negative breast tumors decreased with age at diagnosis among BRCA1 (P-trend = 1.2 × 10−5), but increased with age at diagnosis among BRCA2, carriers (P-trend = 6.8 × 10−6). The proportion of triple-negative tumors decreased with age at diagnos…