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RESEARCH PRODUCT
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
L. PalmuI. RiihimäkiS. KallijärviEija TuominenAri VirtanenEsa TuovinenJ. NystenVictor OvchinnikovT. AlankoP. LaitinenJ. HarkonenMarko Yli-koskiG. P. TiourineKati Lassila-periniA. PirojenkoS. NummelaP. Heikkilasubject
inorganic chemicalsPhysicsNuclear and High Energy PhysicsSiliconPhysics::Instrumentation and Detectorsbusiness.industryAnnealing (metallurgy)Surface photovoltagetechnology industry and agricultureAnalytical chemistrychemistry.chemical_elementRadiationFloat-zone siliconequipment and suppliescomplex mixtureschemistryOptoelectronicsIrradiationParticle radiationbusinessInstrumentationRadiation hardeningdescription
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-10-01 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |