0000000000824330
AUTHOR
G. P. Tiourine
Simultaneous wide-range stopping power determination for several ions
A new procedure to extract simultaneously continuous stopping power curves for several ions and several absorbers over a wide energy range and with statistical errors reduced to negligible level is presented. The method combines our novel time-of-flight based method with the capability of our K130 cyclotron and ECR ion-source to produce the so-called ion cocktails. The potential of the method is demonstrated with a 6.0 MeV/u cocktail consisting of 16O4+, 28Si7+ and 40Ar10+ ions. The stopping power in polycarbonate in the energy range of 0.35–5 MeV/u has been determined with absolute uncertainty of less than 2.3% and with relative below 0.2%. The results are compared with literature data and…
Fragment mass distribution in superasymmetric region in proton-induced fission of U and Th
Fission fragment mass distributions down to super-asymmetric mass region and both pre- and post-scission neutron multiplicity for238U(p,fission) reaction atEp = 20, 35, 50, 60 MeV and for232Th(p, fission) reaction atEp = 50, 60 MeV were measured using HENDES set-up. The results indicate enhancement for super-asymmetric mass division at intermediate excitation energies.
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Fine structure in fragment mass-energy distribution from 238U+40Ar (275 MeV)
Existence of a new feature in fragment mass-energy distribution is reported. Careful analysis of the data obtained in the reaction 238U + 40Ar (275 MeV) shows that small but statistically significant ripples visible already in the gross mass spectrum come from extended and regular 2D patterns in the TKE vs. mass matrix. Intensity distributions of these patterns coincide with the location of heavy clusters such as 78Ni, 108Mo, or 132Sn. Presumably, the observed patterns show the dominant trajectories in the elongation vs. mass-asymmetry space of the decaying system. This information, unknown in the past, can shed a new light even on the previously well-studied reactions.
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.