0000000000082460
AUTHOR
T. Alanko
showing 9 related works from this author
Stopping powers of havar and effective charge for 1.4–3.2 MeV/u 127I-ions
2000
Abstract Stopping powers of havar for 1.4–3.2 MeV/u 127 I-ions have been determined by the transmission technique using two geometrical arrangements. No previous data have been published for havar with this ion. The experimental data are compared with predictions obtained by using Bragg’s additivity rule with various parametrizations of the stopping power found in the literature. The values obtained by the parametrizations underestimate the experimental data by 5–11%. The empirical correction scheme of Thwaites yields values in rather good agreement with the present results, especially at energies above 1.9 MeV/u. The effective charges of the 127 I ions were also deduced from the experiment…
New approach to energy loss measurements
2002
Abstract A new approach to energy loss measurements is proposed. In the same experiment electronic stopping force (power) in gold, nickel, carbon, polycarbonate and Havar for 40 Ar, 28 Si, 16 O, 4 He and 1 H ions in the energy range 0.12–11 MeV/u has been measured. In this paper we give the full results for gold, nickel, and carbon and for 40 Ar, 16 O, 4 He and 1 H ions. Good agreement of the measured stopping force values for light ions with literature data is interpreted as the positive test of the experimental technique. The same technique used with heavy ions yields agreement with the published data only for energies above 1 MeV/u. At lower energies we observe progressively increasing d…
A novel method for obtaining continuous stopping power curves
2001
Abstract A new method has been developed for obtaining continuous stopping power curves in transmission geometry. In the method both the incident energy of the particle and its energy after passing through the sample foil are extracted directly from the semiconductor detector. Full range of energies is measured simultaneously eliminating step-by-step measurements and providing continuous data. A time-of-flight (TOF) spectrometer provides unambiguous matching of relevant particle groups from the run with and without absorber. Suitable energy distribution of incident particles was achieved by choosing the right thickness and tilting angle of a scattering foil. The method is very fast and reli…
Slowing down of 1.3–3.5 MeV/u Fe, Kr and I ions in ten metals
2000
Abstract Stopping powers for 1.3–3.5 MeV/u 56 Fe, 80, 84 Kr and 127 I ions in Mg, V, Fe, Co, Ni, Cu, Nb, Sn, Ta and Au have been determined by a transmission technique exposing the metallic sample foils to the direct ion beam. No previous data have been published for Mg, V, Fe, Co, Nb, Sn or Ta stopping media with these ion energies. The experimental results are compared with parametrizations of the stopping powers found in the literature (SRIM-2000 and Hubert’s parametrization). Discrepancies as high as 21 and 16% are observed for SRIM and Hubert’s parametrization, respectively. However, there is agreement between the present results and other experimental data available at corresponding i…
Stopping powers of havar for 1.6, 2.3 and 3.2 MeV/u heavy ions
2000
Abstract Stopping powers of havar for 28,30 Si-, 36 Ar-, 54,56 Fe- and 80,84 Kr-ions with energies of 1.6, 2.3 and 3.2 MeV/u have been determined by a transmission technique. Sample foils are exposed to the direct beams. No previous data for havar with these ions have been published. The obtained results are brought together with literature havar data for 1 H-, 4 He-, 7 Li-, 11 B-, 12 C-, 14 N-, 16 O- and 127 I-ions at the same ion velocity. The experimental data are compared with the values predicted by the SRIM-2000 parametrization using Bragg’s rule. A systematic underestimation, by 6–23%, of the experimental stopping powers was observed. The empirical correction scheme of Thwaites has b…
Simultaneous wide-range stopping power determination for several ions
2002
A new procedure to extract simultaneously continuous stopping power curves for several ions and several absorbers over a wide energy range and with statistical errors reduced to negligible level is presented. The method combines our novel time-of-flight based method with the capability of our K130 cyclotron and ECR ion-source to produce the so-called ion cocktails. The potential of the method is demonstrated with a 6.0 MeV/u cocktail consisting of 16O4+, 28Si7+ and 40Ar10+ ions. The stopping power in polycarbonate in the energy range of 0.35–5 MeV/u has been determined with absolute uncertainty of less than 2.3% and with relative below 0.2%. The results are compared with literature data and…
The effect of oxygenation on the radiation hardness of silicon studied by surface photovoltage method
2002
The effect of oxygenation on the radiation hardness of silicon detectors was studied. Oxygen-enriched and standard float-zone silicon pin-diodes and oxidized samples were processed and irradiated with 15-MeV protons. After the irradiations, the surface photovoltage (SPV) method was applied to extract minority carrier diffusion lengths of the silicon samples. Adding oxygen to silicon was found to improve the radiation hardness of silicon. The effect was visible in minority carrier diffusion lengths as well as in reverse bias leakage currents. The suitability of SPV method for characterizing irradiated silicon samples was proved.
Competition of fission with the population of the yrast superdeformed band in $^{194}$Pb
1999
The 194Pb yrast superdeformed band has been populated in two reactions induced by two different beams delivered by the JYFL cyclotron. These two reactions differ in the asymmetry ratio (i.e. the ratio of the target mass over the projectile one) by more than a factor 3. For the first time, a superdeformed band of the A≈190 mass region has been populated using such a very heavy beam, namely 74Ge.
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with protons
2003
Abstract Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current–voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.