Search results for "8"
showing 10 items of 46225 documents
Resistive communications based on neuristors
2017
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can function at the same time as memory and as a communication unit. This paper presents a new approach to the use of the memristor and develops the concept of resistive communication.
Polarization and acoustic properties of barium-modified lead-free potassium–sodium niobate ceramics
2017
The publication costs of this article were covered by the Estonian Academy of Sciences and the University of Tartu.
Partial discharges at different voltage waveshapes: Comparison between two different acquisition systems
2018
In modern HV apparatuses the wide use of electronic converters, increase the stress on the involved insulation systems and thus affect the reliability of the whole power grid. Additionally, such non-sinusoidal voltage shapes contain high gradient flanks that create problems in the detection of partial discharge (PD) activity. The aim of this paper is to discuss the methodology on how to suitably approach PD detection in insulation systems exposed to various voltage waveshapes in general by comparing two different measuring systems. The first one, equipped with a resonant PD decoupler, designed specifically for detection at typical power electronic waveshapes and the other one, based on an a…
Systematic and statistical uncertainties of the hilbert-transform based high-precision FID frequency extraction method.
2021
Abstract Pulsed nuclear magnetic resonance (NMR) is widely used in high-precision magnetic field measurements. The absolute value of the magnetic field is determined from the precession frequency of nuclear magnetic moments. The Hilbert transform is one of the methods that have been used to extract the phase function from the observed free induction decay (FID) signal and then its frequency. In this paper, a detailed implementation of a Hilbert-transform based FID frequency extraction method is described, and it is briefly compared with other commonly used frequency extraction methods. How artifacts and noise level in the FID signal affect the extracted phase function are derived analytical…
Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM
2020
International audience; In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of permanent and temporarily stuck cells, block errors, and single-bit upsets.
SIC based solid state protections switches for space applications
2017
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment
2018
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel …
High-pressure study of the infrared active modes in wurtzite and rocksalt ZnO
2011
International audience; We present a high-pressure study of ZnO carried out in the mid- to far-infrared frequency domain with the aim of characterizing the optic modes of wurtzite and rocksalt ZnO. We obtained the pressure coefficients of the E1(TO), E1(LO), A1(TO), and A1(LO) modes of the low-pressure wurtzite phase and compare them with previous Raman measurements. The optical modes of the high-pressure rocksalt phase are infrared active, so we were able to determine their wave numbers and pressure dependencies. In the wurtzite phase, high pressure induces a slight decrease in both longitudinal and transverse effective charges. The decrease is more pronounced in the rocksalt phase.
Comparative Study on Micromechanical Properties of ZnO:Ga and ZnO:In Luminiscent Ceramics
2021
The research has been supported by the Project ERANET RUS_ST#2017-051(Latvia) and #18-52-76002 (Russia). The Institute of Solid State Physics, University of Latvia as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework, Program H2020-WIDESPREAD-01-2016-2017-Teaming Phase 2 under grant agreement No. 739508, project CAMART2.
Molecular dynamics simulations of nanometric metallic multilayers: Reactivity of the Ni-Al system
2011
The reactivity of a layered Ni-Al-Ni system is studied by means of molecular dynamics simulations, using an embedded-atom method type potential. The system, made of an fcc-Al layer embedded in fcc-Ni, is initially thermalized at the fixed temperature of 600 K. The early interdiffusion of Ni and Al at interfaces is followed by the massive diffusion of Ni in the Al layer and by the spontaneous phase formation of $B2$-NiAl. The solid-state reaction is associated with a rapid system heating, which further enhances the diffusion processes. For longer times, the system may partly lose some its $B2$-NiAl microstructure in favor of the formation of $L{1}_{2}$-${\mathrm{Ni}}_{3}\mathrm{Al}$. This st…