Search results for "AF"
showing 10 items of 23539 documents
Recent progress in understanding the persistent luminescence in SrAl 2 O 4 :Eu,Dy
2019
Ever since the discovery of SrAl2O4:Eu,Dy persistent afterglow material, that can intensively glow up to 20 h, the mechanism of long-lasting luminescence has been a popular area of research. The re...
Mechanical characterisation of pentagonal gold nanowires in three different test configurations: A comparative study.
2019
Abstract Mechanical characterisation of individual nanostructures is a challenging task and can greatly benefit from the utilisation of several alternative approaches to increase the reliability of results. In the present work, we have measured and compared the elastic modulus of five-fold twinned gold nanowires (NWs) with atomic force microscopy (AFM) indentation in three different test configurations: three-point bending with fixed ends, three-point bending with free ends and cantilevered-beam bending. The free-ends condition was realized by introducing a novel approach where the NW is placed diagonally inside an inverted pyramid chemically etched in a silicon wafer. In addition, all thre…
How Gettering Affects the Temperature Sensitivity of the Implied Open Circuit Voltage of Multicrystalline Silicon Wafers
2019
The temperature sensitivity of the open circuit voltage of a solar cell is mainly driven by changes in the intrinsic carrier concentration, but also by the temperature dependence of the limiting recombination mechanisms in the cell. This paper investigates the influence of recombination through metallic impurities on the temperature sensitivity of multicrystalline silicon wafers. Spatially resolved temperature dependent analysis is performed to evaluate the temperature sensitivity of wafers from different brick positions before and after being subjected to phosphorus diffusion gettering. Local spatial analysis is performed on intra-grain areas, dislocation clusters and grain boundaries. Lar…
Study of the P3HT/PCBM interface using photoemission yield spectroscopy
2016
Photogeneration efficiency and charge carrier extraction from active layer are the parameters that determine the efficiency of organic photovoltaics (OPVs). Devices made of organic materials often consist of thin (up to 100nm) layers. At this thickness different interface effects become more pronounced. The electron affinity and ionization energy shift can affect the charge carrier transport across metal-organic interface which can affect the performance of the entire device. In the case of multilayer OPVs, energy level compatibility at the organic-organic interface is as important. Photoemission yield spectroscopy was used for organic-organic interface study by ionization energy measuremen…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
Deviation of H− beam extraction simulation model
2018
Negative hydrogen ion source extraction system development is dependent on accurate and fast simulation methods for modelling the behaviour of ion and electron beams. Traditionally this type of work has been done using ray-tracing extraction codes, such as IBSimu. The plasma extraction model in IBSimu has been observed to under-estimate the charge density near the plasma sheath, leading to incorrect prediction of the current at which the system produces the optimum emittance. It is suspected that this deviation results from the approximations made by the model, neglecting the magnetic field and collisional effects near the sheath region. Results and comparisons to simulations are presented …
Impact of the molecular structure of an indandione fragment containing azobenzene derivatives on the morphology and electrical properties of thin fil…
2016
Abstract The solution casting method is low-cost processing method. Moreover, it is possible to prepare amorphous thin films by using this method, and thus, both optical quality and electrical properties could be improved in compare to polycrystalline films made by thermal evaporation in vacuum. Therefore, low-molecular-weight compounds that form amorphous structure from solution could be promising in organic electronics. In this work film morphology, molecule energy levels, and charge carrier mobility in thin films of indandione fragment containing azobenzene derivatives were studied. Deep charge carrier trapping states that drastically influenced charge carrier mobility were observed for …
Single crystal-like thin films of blue bronze
2021
Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 O 3 (1-102) and S r T i O 3 (510) substrates. Structural and imaging characterization revealed good quality films with well oriented grains of few microns in length. Both non-selective (transport) and order-selective (femtosecond pump-probe spectroscopy) probes revealed charge density wave properties that are very close to those of the single crystals. The films exhibit metal-semiconductor phase transition in resistivity, pump-probe data show phase transition at the same temperature as the single crystal and the threshold for the photo-induced phase transition is approximately the same as in…
Two-phase dielectric polar structures in 0.1NBT-0.6ST-0.3PT solid solutions
2018
Abstract In this work we address the peculiarities of the macroscopic responses in ternary 0.1Na0·5Bi0·5TiO3-0.6SrTiO3-0.3PbTiO3 (0.1NBT-0.6ST-0.3PT) solid solutions. These solid solutions exhibit a spontaneous first order relaxor to normal ferroelectric phase transition. The phase transition is accompanied by a broad dielectric relaxation which expands over 10 orders of magnitude in frequency just above the phase transition temperature. The temperature dependence of polarization shows that non-zero net polarization persists above the phase transition temperature. Below the phase transition temperature, it is not possible to describe the temperature dependence of polarization with a power l…