6533b854fe1ef96bd12adfae

RESEARCH PRODUCT

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

Jose M. BlanesR. GutierrezEnrique MasetFrancesco IannuzzoAusias GarrigosDavid Marroqui

subject

010302 applied physicsMaterials sciencebusiness.industry020208 electrical & electronic engineering02 engineering and technologyDielectricCondensed Matter Physics01 natural sciencesAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSemiconductorCatastrophic failureRobustness (computer science)0103 physical sciencesMOSFET0202 electrical engineering electronic engineering information engineeringOptoelectronicsBreakdown voltageCascodeElectrical and Electronic EngineeringSafety Risk Reliability and QualitybusinessShort circuit

description

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit characterizations are presented.

yearjournalcountryeditionlanguage
2019-09-01Microelectronics Reliability
https://doi.org/10.1016/j.microrel.2019.113429