0000000000309173
AUTHOR
David Marroqui
Circuit proposals for high-voltage latching current limiters
This work discusses some ideas to adapt existing low voltage Latching Current Limiter (LCL) circuits to high voltage operation to provide a basis for future designs. Component selection, driver and ancillary power supply are key issues discussed which eventually provides a high-voltage LCL proposal. Experimental validation of two different prototypes (380Vdc and 1kVdc) is included as well as some digital techniques to enhance LCL capabilities.
SIC based solid state protections switches for space applications
Development and technology maturation of Silicon Carbide (SiC) power transistors over the last 15 years has motivated its study in aerospace systems. When compared with Si devices, superior voltage blocking capacity and the capability of operation at higher temperatures, give important advantages in space power electronics applications, similar to what happens in terrestrial electronics. This paper discusses the use of SiC power transistors for Solid State Power Switches especially addressed to the space segment. Two applications will be covered, the first is the Solid State Shunt Switch, widely used in high power Direct Energy Transfer (DET) photovoltaic power regulators and the second is …
SiC Based Latching Current Limiter for High Voltage Space Power Distribution Systems
This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…