Search results for "Cascode"

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

Experimental investigation on a cascode-based three-phase inverter for AC drives

2021

High speed electrical drives and machines represent a promising solution to cope with the increasing electrification in several fields, e.g. industrial electronics and mobility. According to that, power electronics is going more and more towards innovative technologies of semiconductor devices, such as Gallium-Nitride (GaN) and Silicon-Carbide (SiC), providing the opportunity of faster switching transients and therefore of higher switching frequencies. A challenging perspective is represented by gaining higher and higher switching frequencies while keeping high voltage and low power losses. In this scenario, the Cascode (CC) configuration can represent a reliable solution in order to reach …

On the use of front-end cascode rectifiers based on normally on SiC JFET and Si MOSFET

2014

The new wide band-gap semiconductor devices provide new properties to be explored. Normally on silicon carbide (SiC) JFET power devices have several advantages, in particular low switching losses and the potential capabilities of high temperature and high reverse blocking voltage. Looking for improving the overall efficiency in power converters, new structures based on these power devices might be studied. In this paper, a cascode rectifier based on normally on SiC JFET is presented and analyzed. This rectification structure can be applied as front-end rectifier stage for ac-dc power converters, increasing the overall efficiency of these topologies. A second cascode rectifier based on silic…

Feedback Biasing Based Adjustable Gain Ultrasound Preamplifier for CMUTs in 45nm CMOS

2018

As CMOS technology is scaled down, supply voltages are decreasing and intrinsic gain of the nanoscale CMOS transistors is dropping while the threshold voltages of transistors are remaining relatively constant. In such scaled down nanoscale CMOS technologies, conventional vertical stacking architectures (for example. cascode architectures) for high-gain becomes no more attractive. In this paper we present the analysis and design of a feedback biasing based adjustable gain ultrasound preamplifier which is capable of amplifying signals from 15 MHz to 45 MHz from Capacitive Micromachined Ultrasound Transducers (CMUTs) in 45nm CMOS technology for medical ultrasound imaging applications. From the…

Dynamic behavior analysis and characterization of a cascode rectifier based on a normally-on SiC JFET

2014

Investigation on Cascode Devices for High Frequency Electrical Drives Applications

2019

In the last years a widespread development in the market of electrical drives employing high-speed electrical machines has occurred in various industrial fields, due to the extremely high power density that can be reached. Nevertheless, to maintain output power quality without using bulky filtering networks, DC-AC converters should be controlled by means of higher PWM switching frequencies. New switching device technologies, such as Field Effect Transistors based on SiC and GaN, are therefore gathering momentum in order to comply with the higher working frequencies. To operate under high frequencies and at the same time at high voltage levels, alternative circuital configurations for switch…

A Configuration of 3-phase Traction Inverter Employing {SiC} Devices

2022

In the scenario of a more and more sustainable society, an increasing electrification in different fields, such as mobility and industrial applications, is foreseen in the next decades. As far as power electronics is concerned, a challenging perspective is represented by achieving higher and higher switching frequencies while maintaining high voltage and low power losses. To do that, emerging semiconductor technologies are supposed to be increasingly employed, as well as innovative topologies of connections among switching devices. Among them, the cascode configuration can notably contribute to achieve high levels of dV/dt without losing efficiency. In this paper, a 3-phase Pulse Width Modu…

Preliminary test on a cascode switch for high-frequency applications

2020

Nowadays, an increasing electrification level is being addressed towards different sectors, such as transportation and industrial electronics. To bear that, high speed electrical machines represent a mature technology in different application fields, e.g. avionics, automotive, compressors and spindles. In order to guarantee high speed while keeping high power quality without adopting bulky filtering circuits, DC-AC converters shall be controlled by means of high Pulse Width Modulation (PWM) frequencies. In addition to the emerging switching device technologies, such as those based on Silicon-Carbide (SiC) and Gallium-Nitride (GaN), alternative circuital topologies are crucial in order to co…