Search results for "ARXPS"
showing 3 items of 3 documents
Interfacial reaction during MOCVD growth revealed by in situ ARXPS.
2006
International audience; Angle-resolved X-ray photoelectron spectroscopy (ARXPS) experiments were performed to study in situ the reaction at the film–substrate interface during metal organic chemical vapor deposition (MOCVD) growth of TiO2 thin films deposited on the silicon substrate. The in-depth distribution of chemical species was determined using several ARXPS thickness calculation models considering either single or bilayer systems. By the comparison of two single-layermodels, the presence of a second layer composed of silicon oxidewas evidenced. High-resolution transmission electron microscopy (HRTEM) observations confirmed the stratification of the film in two layers, as well as the …
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
Initial stages of metal oxides thin films growth by MOCVD: physicochemical characterisation of the film/substrate interface
2006
The initial stages of Metalorganic Chemical Vapour Deposition (MOCVD) of TiO2 thin films on Si(100) were studied in situ by surface analyses (XPS, ARXPS, AES). An original experimental set-up was built for this purpose and developed. Information obtained from these in situ experiments was completed by ex situ characterisations (HRTEM, SIMS, GIXRD...).The formation of an interfacial SiOy<2 layer resulting of the interaction of the precursor Ti(OCH(CH3)2)4 with the substrate takes place before the formation of stoichiometric TiO2 and leads to the presence of carbon at the interface. At the deposition temperature, 675 °C, silicon diffusion within the TiO2 external layer was also revealed. Conc…