6533b851fe1ef96bd12a9aa4
RESEARCH PRODUCT
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometric films.
Luc ImhoffM.c. Marco De LucasSylvie BourgeoisA. BrevetBruno Domenichinisubject
Materials scienceThickness measurementSiliconPhotoemission spectroscopyAnalytical chemistrychemistry.chemical_elementARXPS02 engineering and technologySubstrate (electronics)Chemical vapor deposition01 natural sciences0103 physical sciencesMaterials ChemistryTiO2Metalorganic vapour phase epitaxyThin filmThin filmSilicon oxide010302 applied physicsMetals and AlloysSurfaces and InterfacesInterface021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryMOCVD0210 nano-technologyLayer (electronics)description
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestimates the surface coverage of the interfacial layer. A “Double Layer” model taking into account the attenuation of the silicon oxide and substrate signals by the external layer was also developed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2007-06-01 |