Search results for "Absorption band"
showing 10 items of 143 documents
Ion diffusion-controlled processes in fluoride crystals
2001
Ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF 2 , BaF 2 and LiBaF 3 crystals (X-ray irradiated at 290 K) have been investigated by means of ionic conductivity and the correlated ionic thermally stimulated depolarisation current (TSDC), and radiation-induced optical absorption band thermal bleaching techniques at 290-650 K. It was found that under a DC field fluorides store large ionic space-charge. In CaF 2 , BaF 2 and LiBaF 3 , by using the ionic TSDC technique we were able to detect a series of the interstitial anion and/or anion vacancy delocalisation stages in the extrinsic ionic conductivity region. At least 4-6 wide and overlapping ionic TSD…
Photo- and thermostimulated processes in α-Al2O3
1995
Abstract We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al 2 O 3 crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al 2 O 3 crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above…
About complexity of the 2.16-eV absorption band in MgO crystals irradiated with swift Xe ions
2020
Abstract The precise study of the accumulation and subsequent thermal annealing of the defects responsible for the complex absorption band around 2.16 eV, being under discussion in the literature for a long time, has been performed in highly pure MgO single crystals exposed to 0.23-GeV 132Xe ions with a fluence of Φ = 5 × 1011 − 3.3 × 1014 ions/cm2. Three Gaussian components with the maxima at 2.16, 2.02 and 2.40 eV have been considered as a measure of so-called D1, D2 and D3 defects. Similar to the F and F+ centers, the concentration of these defects increases at high fluences without saturation marks, thus confirming their radiation-induced nature (involvement of novel Frenkel defects). T…
Absorption band at 7.6 eV induced by γ-irradiation in silica glasses
2001
Optical absorption of defects induced by γ-irradiation in both natural and synthetic silica is experimentally investigated in the vacuum-ultraviolet (UV) range. Our results show that γ-rays, in a dose range of 1000 Mrad, induce an absorption band centered at 7.6 eV, the so-called E band, whose growth kinetics is not related to γ-activated precursors but to defects of the glassy matrix directly induced via the breaking of Si–O bonds occurring under γ-irradiation. Moreover, we observe that γ-rays do not bleach the E band present in some silica samples before irradiation, so ruling out that the associated defects can be precursors of the paramagnetic E′ centers, also induced by γ-irradiation.
The correlation of the 7.6 eV optical absorption band in pure fused silicon dioxide with twofold-coordinated silicon
1992
Abstract The optical absorption band at 7.6 eV, which appears in oxygen deficient pure silica, does not correlate with any ESR signal in non-irradiated samples. Longlasting illumination at 80 K in the range of its absorption leads to an increase of the absorption band at 5 eV. Subsequent heating to 290 K restores the initial absorption. These data can be explained as photodissociation and thermal recreation of a complex defect containing a twofold-coordinated silicon defect. This complex defect is responsible for the 7.6 eV absorption band.
Luminescence of γ-radiation-induced defects in α-quartz
2004
Optical transitions associated with γ-radiation-induced defects in crystalline α-quartz were investigated by photoluminescence excited by both pulsed synchrotron radiation and steady-state light. After a 10 MGy γ-dose we observed two emissions at 4.9 eV (ultraviolet band) and 2.7 eV (blue band) excitable in the range of the induced absorption band at 7.6 eV. These two luminescence bands show a different temperature dependence: the ultraviolet band becomes bright below 80 K; the blue band increases below 180 K, but drops down below 80 K. Both emissions decay in a timescale of a few ns under pulsed excitation, however the blue band could also be observed in slow recombination processes and it…
Isoelectronic series of twofold coordinated Si, Ge, and Sn atoms in glassy SiO2: a luminescence study
1992
Abstract Luminescence centers causing optical absorption bands in the 5 eV region in oxygen-deficient pure (‘Si-doped’), as well as in Ge- and Sn-doped glassy SiO2 were studied. The spectral and particularly kinetic data show that in all cases luminescence centers with closely similar properties exist which constitute an isoelectronic series. They are attributed to defects, formed by electrically neutral twofold coordinated Si, Ge, and Sn atoms (T20 centers) in glassy SiO2. Twofold coordinated Si causes the characteristic ‘B2’ optical absorption band at 5.03 eV. Upon reaction with atomic hydrogen, T20 centers convert to the well known ‘H(I)’, ‘H(II)’ and ‘H(III)’ ESR-active defects. The alt…
Investigation of optical and radiation properties of oxygen deficient silica glasses
1999
The deficiency of oxygen in pure silica manifests an absorption band at 5 eV as well as an absorption band of higher intensity at 7.6 eV. The band at 5 eV is associated with lone twofold-coordinated silicon centers. The nature of the main band at 7.6 eV has been studied using silica samples with different levels of oxygen deficiency. The excitation via the 7.6 eV band produces a photoelectric response as well as inner center and recombination type luminescence. Two main luminescence bands of the twofold-coordinated silicon center appear: a blue band (2.7 eV) and a UV band (4.4 eV). Induced absorption with several bands as well as thermally stimulated luminescence with complex peak structure…
MS-CASPT2 analysis of the UV thermochromism of octamethyltrisilane
2006
We interpret the reversal of the direction of the thermochromic shift of the first absorption band of peralkylated oligosilanes as the silicon chain is extended, based on multistate complete active space second-order perturbation theory (MS-CASPT2) calculations for octamethyltrisilane, Si3Me8. The observed shift is attributed to the effect of b1 distortions from ground state equilibrium geometry on vertical excited state energies and intensities. A generally contracted basis set of atomic natural orbitals (ANOs) at a ground state geometry optimized in the second-order Moller–Plesset perturbation theory (MP2) approximation with Dunning's correlation consistent triple-zeta basis set (cc-pVTZ)…
Switchable Bactericidal Effects from Novel Silica-Coated Silver Nanoparticles Mediated by Light Irradiation
2011
Here we report on the triggering of antibacterial activity by a new type of silver nanoparticle coated with porous silica, Ag@silica, irradiated at their surface plasmon resonant frequency. The nanoparticles are able to bind readily to the surface of bacterial cells, although this does not affect bacterial growth since the silica shell largely attenuates the intrinsic toxicity of silver. However, upon simultaneous exposure to light corresponding to the absorption band of the nanoparticles, bacterial death is enhanced selectively on the irradiated zone. Because of the low power density used for the treatments, we discard thermal effects as the cause of cell killing. Instead, we propose that …