Search results for "Absorption edge"
showing 10 items of 95 documents
Anisotropy of the refractive index and absorption coefficient in the layer plane of gallium telluride single crystals
1995
Refractive index and absorption coefficient of GaTe for light polarized in the optical axis directions in the layer plane are determined from transmission measurements. The refractive index is determined in the wavelength range from 0.7 to 25 μm and the absorption coefficient in the range of energies from 1.6 to 2 eV at room temperature and at 30 K. The optical constants are found to be anisotropic in the layer plane. The refractive index dispersion is interpreted through a Phillips-Van Vechten model and the Penn gaps for each direction are found to be E pg (⊥b) = 3.37 eV and E pg (∥b) = 3.58 eV. In the long-wavelength region a polar phonon contribution is also taken into account. The absor…
Effects of high pressure on the optical absorption spectrum of scintillating PbWO4 crystals
2006
The pressure behavior of the absorption edge of PbWO4 was studied up to 15.3 GPa. It red-shifts at -71 meV/GPa below 6.1 GPa, but at 6.3 GPa the band-gap collapses from 3.5 eV to 2.75 eV. From 6.3 GPa to 11.1 GPa, the absorption edge moves with a pressure coefficient of -98 meV/GPa, undergoing additional changes at 12.2 GPa. The results are discussed in terms of the electronic structure of PbWO4 which attribute the behavior of the band-gap to changes in the local atomic structure. The changes observed at 6.3 GPa and 12.2 GPa are attributed to phase transitions.
Variation of the optical absorption edge in AgGaS2 single crystals at high pressure
2003
In this paper the optical absorption edge of AgGaS 2 is measured as a function of pressure up to 26 GPa in order to verify the effect of the three phases transitions occurring in that pressure domain. The direct energy gap increases linearly with pressure at the rate of about 4.0 x 10 -2 eV GPa -1 up to 10.2 GPa. The absence of any discontinuity in the energy gap in the pressure range of 4.2-10.2 GPa confirms that the volume change, in the chalcopirite to monoclinic second-order transition, if it exists, is very small. When the pressure is raised above 10.2 GPa, the energy gap drops suddenly by about 1.1 eV and the spectral form of the absorption coefficient is typical of semiconductors wit…
Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure …
2003
In this paper we review some recent results on the electronic structure of III-VI layered semiconductors and its dependence under pressure, stressing the specific features that differentiate their behaviour from that of tetrahedrally coordinated semiconductors. We will focus on several unexpected results that have led to changes in the image that was currently accepted a few years ago. Intralayer bond angles change under pressure and the layer thickness remains virtually constant or increases. As a consequence, models based in intra- and inter-layer deformation potentials fail in explaining the low pressure nonlinearity of the band gap. Numerical-atomic-orbital/density-functional-theory ele…
Direct to Indirect Crossover in III-VI Layered Compounds and Alloys under Pressure
1999
The pressure dependence of the optical absorption edge of In1± xGaxSe (0 < x < 0.2) and GaTe has been investigated in order to determine the direct to indirect crossover pressure and the energy difference between the absolute and subsidiary minima of the conduction band at ambient pressure. In the In1± xGaxSe alloy, the crossover pressure decreases with increasing Ga proportion. For InSe, from the extrapolation to x = 0 the band crossover is found to occur at 4.3 GPa and the subsidiary minimum of the conduction band is located, at ambient pressure, (0.32 0.02) eV above the absolute minimum. In addition, the energy difference between the conduction band minima is shown to decrease linearly w…
<title>Nature of fundamental absorption edge of WO<formula><inf><roman>3</roman></inf></formula></title&…
1997
The fundamental absorption edge of amorphous, polycrystalline and crystalline tungsten trioxide (WO3) thin films obtained by different techniques (thermal evaporation, rf plasma sputtering, chemical gas transport) was investigated. Special attention was paid to correct measurements of absorption values of all WO3 thin films taking into account the scattered light, interference effects and reflection losses. The indirect edge at 2.70 eV was determined for crystalline WO3, but for crystal WO3:Ti the direct edge in the same place (2.72 eV) was found. For polycrystalline WO3 thin film first edge transition located at 2.76 eV had a quadratic dependence similar to the amorphous film at a higher p…
Ab initio calculations of the Ni K ‐edge XANES in Ni c Mg 1‐c O solid solutions
2005
An interpretation of the Ni K-edge X-ray absorption near edge structure (XANES) in pure NiO and NicMg1-cO solid solutions is given based on three types of ab initio theoretical calculations: the full-multiple-scattering (FMS) approach, the finite difference method (FDM) and the full potential linear muffin-tin orbital (FP-LMTO) method within the LSDA+U approach. The first two methods differ in the cluster potential approximation: the spherically symmetric muffin-tin potential is used in the FMS approach, whereas a non-muffin-tin numerical potential makes the core of the FDM. We found that the FMS and FDM techniques allow rather accurate description of the experimental XANES signal especiall…
Defects at the TiO2(100) surface probed by resonant photoelectron diffraction.
2006
We report photoelectron diffraction (PED) experiments of weakly sub-stoichiometric TiO 2 (100) rutile surfaces. Apart from standard core-level PED from the Ti-2p3/2 line, we have studied valence band PED from the defect induced Ti-3d states in the insulating band gap. For maximum yield, the latter were resonantly excited at the Ti-2p absorption edge. The PED patterns have been analyzed within the forward scattering approximation as well as by comparison with simulated PED patterns obtained in multiple scattering calculations. The analysis shows that the defect induced Ti-3d charge is mainly located on the second layer Ti atoms. © 2007 Elsevier B.V. All rights reserved.
Cation Distribution in a Titanium Ferrite Fe2.75Ti0.25O4Measured byin-SituAnomalous Powder Diffraction Using Rietveld Refinement
1998
Many ferrites contain different cations with various valence states and location in the spinel structure. In compounds such as these, only a combination of different techniques such as Mussbauer spectroscopy, IR analysis, and thermogravimetry allows the distribution of cations to be obtained. For very complicated distributions, the mathematical decomposition of derivative thermogravimetric curves (DTG) leading to quantitative distribution is uncertain. In this paper, we present an alternative technique based on resonant diffraction. The anomalous scattering of each cation in the crystalline material is used to determine its amount and position by Rietveld refinement. Since the energy for su…
Urbach absorption edge of silica: reduction of glassy disorder by fluorine doping
2004
Abstract The vacuum-ultraviolet fundamental absorption edge (‘Urbach edge’) of four types of synthetic silica glasses, ‘wet’, ‘dry’, and doped by 570 and 6010 ppm wt. fluorine, was studied in the absorption coefficient range (1 cm−1–500 cm−1) at room temperature. The absorption edge has exponential form in agreement with the Urbach’s rule. The well-documented increase of vacuum-ultraviolet transparency upon fluorine doping is due to a steeper absorption edge (shorter ‘Urbach tail’) as compared to undoped silicas. The increase of the edge slope in F-doped silica occurs already the lower dopant concentration (570 ppm), the slope does not increase further in the 6010 ppm doped glass. These fin…