Search results for "Absorption edge"
showing 10 items of 95 documents
Luminescence mechanisms of defective ZnO nanoparticles.
2016
ZnO nanoparticles (NPs) synthesized by pulsed laser ablation (PLAL) of a zinc plate in deionized water were investigated by time-resolved photoluminescence (PL) and complementary techniques (TEM, AFM, μRaman). HRTEM images show that PLAL produces crystalline ZnO NPs in wurtzite structure with a slightly distorted lattice parameter a. Consistently, optical spectra show the typical absorption edge of wurtzite ZnO (Eg = 3.38 eV) and the related excitonic PL peaked at 3.32 eV with a subnanosecond lifetime. ZnO NPs display a further PL peaking at 2.2 eV related to defects, which shows a power law decay kinetics. Thermal annealing in O2 and in a He atmosphere produces a reduction of the A1(LO) Ra…
Synthesis of multi-color luminescent ZnO nanoparticles by ultra-short pulsed laser ablation
2020
Abstract Crystalline ZnO nanoparticles (NPs) are synthesized by ultra-short femtosecond (fs) pulsed laser ablation (PLA) of a zinc plate in deionized water, and are investigated by optical absorption and time resolved luminescence spectra in combination with the morphology and structure analysis. The comparison with previous experiments based on short nanosecond (ns) PLA highlights that pulse duration is a crucial parameter to determine the size and the optical properties of ZnO NPs. While short PLA generates NPs with average size S ‾ of ~ 30 nm, ultrashort PLA allows to achieve much smaller NPs, S ‾ ⩽ 10 nm, that evidence weak quantum confinement effects on both the absorption edge and th…
Generation and excitation of point defects in silica by synchrotron radiation above the absorption edge
2010
We report photoluminescence measurements carried out on amorphous SiO{sub 2} upon excitation by synchrotron light. Exposure of the as-grown material to above-edge light at low temperature induces the formation of nonbridging oxygen hole centers (NBOHC), localized in a thin layer below the surface limited by the penetration depth (tens of nm) of impinging light. After concluding the exposure to 11 eV light, stable defects are revealed by observing their characteristic 1.9 eV photoemission band excited at 4. 8eV. The local concentration of induced defects, supposedly formed by nonradiative decay of excitons, is very high (close to approx10{sup 21} cm{sup -3}) and independent of the previous h…
<title>Holographic recording in amorphous chalcogenide semiconductor thin films</title>
2000
ABSTRACT The photoinduced changes ofoptical properties and holographic recording in amorphous chalcogenide semiconductor As-S- Se and As2S3 thin films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that theself-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light orthermal treatment can be used to increase the diffraction efficiency ofthe holograms.Keywords: chalcogenide semiconductors, amorphous films, photoresists, photoinduced processes, relaxation processes,self-enhancement of h…
ZnO and ZnO:Ga Ceramics for Advanced Scintillators
2020
The undoped ZnO reveals narrow luminescence bands located close to fundamental absorption edge, known as near band luminescence (NBL) and defects related wide luminescence band within visible range of spectrum. NBL decay is in sub-nanosecond range and it is promising for fast scintillator development. However, the defects luminescence decay is in microsecond range and it is disturbing for fast scintillators. Dopants strongly change the luminescence properties, mainly the intensity and decay time and that is the cause for intense study of doped ZnO luminescence properties. Thus the study of luminescent properties of undoped ZnO and doped ZnO:Ga ceramics was carried out. The dependence of the…
Quantitative analysis of rhenium in irradiated tungsten
2021
Abstract Pure tungsten (W), irradiated to 3.5 dpa in a target of the Swiss neutron spallation source (SINQ), was characterized using high-sensitivity HPGe gamma ray spectroscopy to identify the present radionuclides. Synchrotron X-ray absorption spectroscopy was used to quantify the amount of Re produced in the irradiated W. An atomic concentration of 0.61% Re in the irradiated W was determined from the height of the L3-edge X-ray absorption edge jump. Analysis of the local atomic structure from the extended X-ray absorption fine structure (EXAFS) spectra indicates that rhenium (Re) produced in the system is mainly coordinated by W atoms and partly coordinated by void defects. First-princip…
UV–VUV laser induced phenomena in SiO2 glass
2004
Abstract Creation and annihilation of point defects were studied for SiO2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO2 glass to UV–VUV laser light. Topologically disordered structure of SiO2 glass featured by the distribution of SiOSi angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained SiOSi bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO2 glass for F2 laser is greatly improved in fluorine-doped SiO2 glass…
The πd scattering length from Kα X-rays
1974
Abstract X-rays from the K α transition (2P → 1S) of the π − d mesic atom have been observed. Their energy, 2592.8 −2.0 +1.6 , has been measured by the critical absorber technique, using the M V absorption edge in bismuth. The strong interaction shift in the 1S state is −4.8 eV, corresponding to a scattering length a ( π d) = −(0.052 −0.017 +0.022 ) m π −1 , in agreement with recent calculations. The intensity ratio K α /K total = 0.548 ± 0.015.
High-pressure, high-temperature phase diagram of InSe: A comprehensive study of the electronic and structural properties of the monoclinic phase of I…
2006
We report on an investigation of the high-pressure, high-temperature phase diagram of InSe. We optically observed the phase transition from the rhombohedral polytype (InSe-I) to the monoclinic phase (InSe-II) and determined the phase boundary up to $10\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$. High-pressure resistivity measurements were performed to complement the optical measurements. Monoclinic and cubic InSe (InSe-III) were observed to be metastable around $14.5\phantom{\rule{0.3em}{0ex}}\mathrm{GPa}$ and $420\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, and evidence suggesting the existence of an as yet unidentified new high-pressure and high-temperature phase was found. By means of optical ab…
Pressure and temperature dependence of the band-gap in CdTe
2003
In this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 μm epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Γ v 15 → Γ c 1 ) in the zinc-blende phase is about 7.1 × 10 -2 eV GPa -1 and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc-blende phase is about -3.76 × 10 -4 eV K -1 . Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be presen…