Search results for "Acceptor"

Luminescence properties of LiGaO2 crystal

2017

The study was supported by the Latvia-Lithuania-Taiwan research project “Nonpolar ZnO thin films: growth-related structural and optical properties” (Latvia: LV-LT-TW/2016/5 , Lithuania: TAP LLT 02/2014 , Taiwan: MOST 103-2923-M-110-001-MY3 ).

<title>Formation of deep acceptor centers in AlGaN alloys</title>

2008

AlGaN alloy thin film materials are of high interest for light emitting diodes (LED of the ultraviolet (UV) spectral region. Origin of the deep intrinsic and impurity Si states in the AlxGa1-xN (0 < x < 0.35) epilayer structures grown by metalorganic chemical vapor deposition (MOCVD) technique have been considered. Effects of the lattice mismatch and Si-doping in the heterostructures of epilayers with different alloy composition are investigated using time resolved photoluminescence (PL) of donor – deep acceptor (DA) pairs. It is shown that the undoped AlGaN alloys, grown on a GaN buffer layer, due to the lattice mismatch contain the increased concentration of cation vacancy (Vcation) defec…

Electronic Excitation Energy Transfer between Two Single Molecules Embedded in a Polymer Host

2007

Unidirectional electronic excitation energy transfer from a photoexcited donor chromophore to a ground state acceptor chromophore - both linked by a rigid bridge - has been investigated by low temperature high-resolution single molecule spectroscopy. Our approach allows for accurately accessing static disorder in the donor and acceptor electronic transitions and to calculate the spectral overlap for each couple. By plotting the experimentally determined transfer rates against the spectral overlap, we can distinguish and quantify Förster- and non-Förster-type contributions to the energy transfer.

Probing molecular wire: synthesis of donor-acceptor ensembles exhibiting long range electron transfer

2005

A series of donor–acceptor arrays (C60–oligo-PPV–exTTF; 16–20) incorporating p-conjugated oligo(phenylenevinylene) wires (oligo-PPV) of different length between p-extended tetrathiafulvalene (exTTF) as electron donor and C60 as electron acceptor has been prepared by multistep convergent synthetic approaches. The electronic interactions between the three electroactive species present in 16–20 were investigated by UV-visible spectroscopy and cyclic voltammetry (CV). Our studies clearly show that, although the C60 units are connected to the exTTF donors through a p-conjugated oligo- PPV framework, no significant electronic interactions are observed in the ground state. Interestingly, photoindu…

Molecular wires - long range electron tunneling and hopping in novel donor-acceptor ensembles

2004

Ultrafast Electron Transfer in Photosynthesis: Reduced Pheophytin and Quinone Interaction Mediated by Conical Intersections

2007

The mechanism of electron transfer (ET) from reduced pheophytin (Pheo−) to the primary stable photosynthetic acceptor, a quinone (Q) molecule, is addressed by using high‐level ab initio computations and realistic molecular models. The results reveal that the ET process involving the (Pheo−+Q) and (Pheo+Q−) oxidation states can be essentially seen as an ultrafast radiationless transition between the two hypersurfaces taking place via conical intersections (CIs) and it is favoured when the topology of the interacting moieties make possible some overlap between the lowest occupied molecular orbitals (LUMO) of the two systems. Thus, it is anticipated that large scale motions, which are difficul…

Enhanced electron-transfer properties of cofacial porphyrin dimers through pi-pi interactions

2009

pi-pi assisted: Photoinduced electron transfer from cofacial porphyrin dimers to electron acceptors is prominently accelerated, whereas the back electron transfer is decelerated, relative to the corresponding porphyrin monomer (see figure).The radical cation of zinc tetrapentylporphyrin is dimerized with an excess of the neutral counterpart to form the dimer radical cation in which the unpaired electron is delocalized over both porphyrin rings. The dimeric radical cation exhibits an NIR absorption spectrum characteristic of weak pi-bond formation between the porphyrin rings. When cofacial porphyrin dimers, linked by different spacers, are oxidized such pi-bond formation between the porphyri…

Time-dependent electric field in Al/CdTe/Pt detectors

2015

Abstract Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from bias-induced time instability (polarization). Polarization phenomena cause a progressive time-degradation of the spectroscopic performance of the detectors, due to hole trapping and detrapping from deep acceptor levels that directly control the electric field distribution. In this work we present experimental investigations on the electric field profile of planar Al/CdTe/Pt detectors by means of Pockels effect measurements. The time/temperature dependence of the electric field was investigated in a long time window (up to 10 h) and the correlation with the reverse c…

Polarization phenomena in Al/p-CdTe/Pt X-ray detectors

2013

Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium, aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by …

Investigation of nitrogen-related acceptor centers in indium selenide by means of photoluminescence: Determination of the hole effective mass

1997

In this work we report on steady-state and time-resolved photoluminescence (PL) measurements in nitrogen-doped p-type indium selenide in the 33--210-K temperature range. In samples with low nitrogen concentration the photoluminescence spectrum consists of exciton-related peaks and a band-to-acceptor recombination peak (2.1-\ensuremath{\mu}s lifetime) with LO-phonon replica. An ionization energy of 65.5 meV is proposed for the nitrogen-related acceptor. A long-lived (18 \ensuremath{\mu}s) component, which consists of an asymmetric broadband centered around the acceptor peak, has been also detected by means of time-resolved PL. Samples with a higher nitrogen concentration show a PL spectrum t…