Search results for "Al2O3"

showing 10 items of 18 documents

A First-Principles Study of the Ag/a-Al2O3(0001) Interface

2001

Ab initio simulations of the Ag/a-Al2O3(0001) interface have been performed for periodic slab models. We have considered Al- and O-terminated corundum surfaces, low and high substrate coverages by silver, as well as the two preferred Ag adsorption sites. The two different terminations give rise to qualitatively different results: silver physisorption on the Al-terminated substrate and chemisorption on O-terminated one. The latter could be treated as a possible model for the defective Al-terminated substrate, where the outermost aluminium ions are removed (completely or partly). This makes O-terminated surface highly reactive towards a deposited metal, in order to restore initial corundum st…

Hartree-Fock methodAg adsorptionAb initiochemistry.chemical_elementCorundumSubstrate (electronics)engineering.materialCatalysislcsh:ChemistryInorganic ChemistryAdsorptionPhysisorptionAl- and Oterminated (0001) surfacesAluminiumComputational chemistryelectron correlation correctionsPhysical and Theoretical Chemistrylcsh:QH301-705.5Molecular BiologySpectroscopyab initioOrganic ChemistryGeneral MedicineComputer Science Applicationsmetal/oxide interfaceCrystallographylcsh:Biology (General)lcsh:QD1-999chemistryChemisorptionengineeringStoichiometrya-Al2O3 (corundum)International Journal of Molecular Sciences
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A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films

2020

For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…

DECOMPOSITIONMaterials scienceSubstrate (electronics)Chemical vapor depositionEPITAXYEpitaxyPyrophoricitychemistry.chemical_compoundAtomic layer depositionTHIN-FILMSDeposition (phase transition)alumiiniThin filmTEMPERATUREplasma processingAL2O3Surfaces and InterfacesatomikerroskasvatusCondensed Matter PhysicsSurfaces Coatings and FilmsChemistryCHEMICAL-VAPOR-DEPOSITIONPhysics and AstronomySINGLEchemistryChemical engineeringALDatomic layer depositionAlkoxideGROWTHohutkalvotJournal of Vacuum Science & Technology A
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Thermal annealing and transformation of dimer F centers in neutron-irradiated Al2O3 single crystals

2020

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. In addition, the research leading to these results has received funding from the Estonian Research Council grant (PUT PRG619).

Nuclear and High Energy PhysicsDimer F-type centersMaterials scienceα-Al2O3DimerAnalytical chemistryCorundum02 engineering and technologyengineering.material01 natural sciencesFluence010305 fluids & plasmaschemistry.chemical_compound0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials ScienceNeutronIrradiationThermal annealingIrradiation by fast neutrons021001 nanoscience & nanotechnologyNeutron temperatureRadiation induced optical absorptionNuclear Energy and EngineeringchemistryengineeringAbsorption (chemistry)0210 nano-technologyLuminescenceJournal of Nuclear Materials
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Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation

2017

Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer-by-layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface pass…

OzoneMaterials scienceHydrogenSiliconPassivationInorganic chemistryta221chemistry.chemical_element02 engineering and technology01 natural sciencesdimetyylialumiinikloridiAtomic layer depositionchemistry.chemical_compoundpuolijohteetAl2O30103 physical sciencesChlorineThin filmta216AlO010302 applied physicsta114021001 nanoscience & nanotechnologyElectronic Optical and Magnetic MaterialsozonechemistryALDdimethylaluminum chloride0210 nano-technologyLayer (electronics)silicon surface passivationAdvanced Electronic Materials
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Kinetics of the electronic center annealing in Al2O3 crystals

2018

Authors are greatly indebted to A. Ch. Lushchik, V. Kortov, M. Izerrouken and R.Vila for stimulating discussions. This work has been carried out within the framework of the Eurofusion Consortium and has received funding from the Euroatom research and training programme 2014–2018 under grant agreement No 633053 . The views and opinions expressed herein do not necessarily reflect those of the European Commission. The calculations were performed using facilities of the Stuttgart Supercomputer Center (project DEFTD 12939 ).

Nuclear and High Energy PhysicsMaterials scienceAnnealing (metallurgy)DimerKinetics02 engineering and technology01 natural sciencesMolecular physicsF centersRadiation defectsIonDiffusionchemistry.chemical_compound0103 physical sciencesAl2O3:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials Science010306 general physicsNeutron irradiationAnnealing kineticsF2 centers021001 nanoscience & nanotechnologyRecombinationNuclear Energy and Engineeringchemistry0210 nano-technologyRecombination
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The corrosion and tribocorrosion resistance of PEO composite coatings containing α-Al2O3 particles on 7075 Al alloy

2018

Abstract Plasma electrolytic oxidation (PEO) of 7075 Al alloy was carried out in silicate base electrolyte containing 200 nm diameter α-Al2O3 particles for producing composite coatings. The process was performed under a soft-sparking regime using a pulsed bipolar signal with several concentrations of α-Al2O3 particles. It was found that the incorporation of α-Al2O3 particles into the coating did not significantly alter the thickness and roughness of the coating. However, the α-Al2O3 particles were detected on surface of the composite coatings. Corrosion tests showed significant improvement in corrosion performance of the composite coatings due to the efficient pore blocking provided by α-Al…

Materials Chemistry2506 Metals and AlloysMaterials scienceTribocorrosionTribocorrosionAlloyComposite numberSurfaces Coatings and FilmCondensed Matter Physic02 engineering and technologyElectrolyteengineering.material010402 general chemistry01 natural sciencesChlorideCorrosionCoatingMaterials ChemistrymedicineComposite materialEISPotentiodynamic polarizationα-Al2O3 particleChemistry (all)PEO coatingSurfaces and InterfacesGeneral ChemistryPlasma electrolytic oxidation021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSurfaces Coatings and FilmsCorrosionSettore ING-IND/23 - Chimica Fisica Applicataengineering0210 nano-technologySurfaces and Interfacemedicine.drugSurface and Coatings Technology
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Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

2015

Abstract We study the impact of ozone-based Al2O3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration…

OzoneMaterials scienceSiliconPassivationAnnealing (metallurgy)Inorganic chemistryOxideGeneral Physics and Astronomychemistry.chemical_elementchemistry.chemical_compoundAtomic layer depositionAl2O3Crystalline siliconta216ta116surface passivationta114ta213Charge densitySurfaces and InterfacesGeneral ChemistryInterfaceCondensed Matter PhysicsSurfaces Coatings and FilmsozoneAtomic Layer DepositionchemistryChemical engineeringatomic layer depositioninterfaceAPPLIED SURFACE SCIENCE
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Re-Evaluation of Chromium Doped Alumina for Dosimetric Applications

2021

Financial support provided by Scientific Research “Luminescence Mechanisms and Dosimeter Properties in Prospective Nitrides and Oxides Using TL and OSL Methods” LZP FLPP No. LZP-2018/1-0361 implemented at the Institute of Solid State Physics, University of Latvia is greatly acknowledged. The Institute of Solid State Physics, University of Latvia as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework Program H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART².

dosimetryPhysicsQC1-999AluminaGeneral EngineeringGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnologyEngineering physicsaluminaal2o3:cr3. Good health030218 nuclear medicine & medical imaging03 medical and health sciences0302 clinical medicine:NATURAL SCIENCES:Physics [Research Subject Categories]media_common.cataloged_instancesol-gelCr [Al2O3]chromiumEuropean union0210 nano-technologymedia_commonLatvian Journal of Physics and Technical Sciences
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Simulations on the mechanism of CNT bundle growth upon smooth and nanostructured Ni as well as θ-Al2O3 catalysts

2011

Abstract In the current study, we have performed ab initio DFT calculations on the gradually growing 2D periodic models of capped single-wall carbon nanotubes (SW CNTs) upon their perpendicular junctions with the Ni(111) substrate, in order to understand the peculiarities of the initial stage of their growth on either smooth or nanostructured catalytic particles. Appearance of the adsorbed carbon atoms upon the substrate follows from the dissociation of CVD hydrocarbon molecules, e.g., CH4: (CH4)ads → (CH)ads+3Hads and (CH)ads → Cads+Hads. (Since the effective growth of CNTs upon Ni nanoparticles occur inside the nanopores of amorphous alumina, we have also simulated analogous surface react…

adsorption and dissociation of ch4Materials scienceQC1-999General Physics and AstronomyNanoparticleNanotechnology02 engineering and technologyCarbon nanotubeflat and nanostructured surfaces of ni and θ-al2o3 catalystsarcmchair and zigzag-type chiralities01 natural sciencesdft calculationsDissociation (chemistry)Catalysislaw.inventionNanoclusterslaw0103 physical sciencesMoleculemechanism of cnt growth010306 general physicsbundles of single-wall cntsPhysics021001 nanoscience & nanotechnologyAmorphous solidChemical bondChemical engineeringcnt-ni junction0210 nano-technologyCentral European Journal of Physics
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Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures

2022

In this article, the charge trapping phenomena in Al2O3 thin films grown by atomic layer deposition (ALD) on AlGaN/GaN heterostructures have been studied by time-dependent capacitance–voltage (C-V) measurements as a function of temperature. In particular, monitoring the transient of the capacitance enabled us to estimate the maximum depth of the insulating layer interested by the negative charge trapping effect under our bias stress conditions and to determine a charge traps density in the bulk Al2O3 in the order of 3 × 1019 cm−3. A temperature dependent C-V analysis up to 150 °C demonstrated the presence of two competitive mechanisms that rule the electron capture and emission in the Al2O3…

Capacitance transient measurementsCharge trappingAl2O3General Physics and AstronomyGallium nitrideSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsPlasma enhanced atomic layer depositionSurfaces Coatings and FilmsApplied Surface Science
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