Search results for "Allium"
showing 5 items of 385 documents
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
2003
A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
The electronic structure of Ge9[Si(SiMe3)3]3-: a superantiatom complex.
2012
We report on the electronic structure of Ge(9)[Si(SiMe(3))(3)](3)(-). Systematic density functional theory analysis of the electronic shell structure of the cluster and its derivatives reveals that the Ge(9)[Si(SiMe(3))(3)](3)(-) and its neutral counterpart have electronic shells that can be explained using the superatom model. The ligand-core interaction of these complexes is distinctly different from previously identified gold, gallium, and aluminium superatom complexes, indicating an electron-donating rather than electron-withdrawing ligand. We modify the electron-counting rule for this case and introduce a simple picture for superatom and superantiatom complexes. Discussions comparing s…
Cytotaxonomical investigation on Allium paniculatum ssp. exaltatum (Alliaceae) from Cyprus.
2004
Arare Allium endemic to Cyprus island, known as A. paniculatum subsp. exaltatum, is here examined. Relevant features in its morphology, caryology and leaf anatomy emphasize the marked taxonomic isolation of this taxon and allow it to be treated as a distinct species, proposed as Allium exaltatum. It is an exaploid plant (2n=48), probably arisen out of allopolyploidy and morphologically related only to some Middle East taxa.
CCDC 1542006: Experimental Crystal Structure Determination
2017
Related Article: Pavel A. Petrov, Dmitry Yu. Naumov, Taisiya S. Sukhikh, Sergey N. Konchenko, Carlos J. Gómez-García, Rosa Llusar|2017|New J.Chem.|41|7849|doi:10.1039/C7NJ01217A
Impact of Gamma Radiation on Dynamic R
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) char…