6533b861fe1ef96bd12c4c0f
RESEARCH PRODUCT
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
T. SmithG. Martı́nez-criadoAna CrosAndrés CantareroN.v. JoshiOliver AmbacherMartin Stutzmannsubject
symbols.namesakechemistrylawConfocalAnalytical chemistrysymbolsSapphirechemistry.chemical_elementSTRIPSGalliumRaman spectroscopyNitrogenlaw.inventiondescription
A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-11-24 | physica status solidi (c) |