Search results for "Applied Physics"

showing 10 items of 1226 documents

High spatial resolution strain measurements at the surface of duplex stainless steels

2007

International audience; The determination of local strain fields at the surface of materials is of major importance for understanding their reactivity. In the present paper, lithography is used to fabricate grid points at the microscale and to map strain gradients within grains and between grains. This method was applied to duplex stainless steels which exhibit heterogeneous strain distributions under straining conditions. The influence of various parameters (the specimen microstructure, the density of slip bands, the number of systems activated and the grid geometry) on the strain value was discussed.

010302 applied physicsMaterials science[ SPI.MAT ] Engineering Sciences [physics]/MaterialsMetallurgyLüders bandtechnology industry and agriculture02 engineering and technologySlip (materials science)Plasticity021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicrostructure01 natural sciences[SPI.MAT]Engineering Sciences [physics]/Materials0103 physical sciences0210 nano-technologyLocal fieldLithographyImage resolutionMicroscale chemistryPhilosophical Magazine
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Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

010302 applied physicsMaterials science[PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th]Schottky barriercu(InDopingMetals and Alloys02 engineering and technologySurfaces and InterfacesInterface[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]021001 nanoscience & nanotechnology01 natural sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCrystallographyGa)Se 2MoSe2/Mo(110)Lattice (order)0103 physical sciencesMaterials ChemistryThin film solar cellThin-film solar cell0210 nano-technologySchottky barrier
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Plasma instabilities of a charge breeder ECRIS

2017

International audience; Experimental observation of plasma instabilities in a charge breeder electron cyclotron resonance ion source (CB-ECRIS) is reported. It is demonstrated that the injection of 133Cs+ or 85Rb+ ion beam into the oxygen discharge of the CB-ECRIS can trigger electron cyclotron instabilities, which restricts the parameter space available for the optimization of the charge breeding efficiency. It is concluded that the transition from a stable to unstable plasma regime is caused by gradual accumulation and ionization of Cs/Rb and simultaneous change of the discharge parameters in 10–100 ms time scale, not by a prompt interaction between the incident ion beam and the ECRIS pla…

010302 applied physicsMaterials science[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]Charge (physics)Plasmaplasma instabilitiescharge breederCondensed Matter Physics01 natural sciences010305 fluids & plasmasNuclear physicsBreeder (animal)Physics::Plasma Physics0103 physical sciences
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The role of seed electrons on the plasma breakdown and preglow of electron cyclotron resonance ion source

2009

The 14 GHz Electron Cyclotron Resonance Ion Source at University of Jyväskylä, Department of Physics (JYFL) has been operated in pulsed mode in order to study the plasma breakdown and preglow effect. It was observed that the plasma breakdown time and preglow characteristics are affected by seed electrons provided by a continuous low power microwave signal at secondary frequency. Sustaining low density plasma during the off-period of high power microwave pulses at the primary frequency shifts the charge state distribution of the preglow transient toward higher charge states. This could be exploited for applications requiring fast and efficient ionization of radioactive elements as proposed f…

010302 applied physicsMaterials science[PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph]Cyclotron resonancechemistry.chemical_elementPlasmaElectron01 natural sciences7. Clean energyElectron cyclotron resonanceIon source010305 fluids & plasmasNeonchemistryIonizationBeta (plasma physics)0103 physical sciencesAtomic physicsInstrumentationComputingMilieux_MISCELLANEOUSReview of Scientific Instruments
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SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

010302 applied physicsMaterials sciencebusiness.industry020208 electrical & electronic engineering02 engineering and technologyDielectricCondensed Matter Physics01 natural sciencesAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSemiconductorCatastrophic failureRobustness (computer science)0103 physical sciencesMOSFET0202 electrical engineering electronic engineering information engineeringOptoelectronicsBreakdown voltageCascodeElectrical and Electronic EngineeringSafety Risk Reliability and QualitybusinessShort circuitMicroelectronics Reliability
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3D magnetic and thermal fields for in the transformer with homogenised amorphous C-core under high frequency

2017

010302 applied physicsMaterials sciencebusiness.industry020208 electrical & electronic engineeringElectrical engineering02 engineering and technology01 natural sciencesAmorphous solidlaw.inventionlaw0103 physical sciencesThermal0202 electrical engineering electronic engineering information engineeringEddy currentAmorphous metal transformerElectrical and Electronic EngineeringComposite materialbusinessTransformerPRZEGLĄD ELEKTROTECHNICZNY
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Space Charges and Partial Discharges Simultaneous Measurements under DC Stress

2016

In the field of HVDC, the main causes of insulation aging are due to the space charge and PD phenomena. In particular, the purpose of the present work is to verify a possibility to measure simultaneously the space charge and the PDs under DC stress in order to evaluate the correlation between both phenomena. The space charge was measured by using a modified PEA cell and PDs were measured by using a novel wireless sensor system. The space charge profile and the PD pulses carried out simultaneously have been reported and discussed.

010302 applied physicsMaterials sciencebusiness.industry020209 energyElectrical engineering02 engineering and technologyMechanicsSpace (mathematics)01 natural sciencesspace charge partial discharges DC stress HVDCStress (mechanics)Settore ING-IND/31 - Elettrotecnica0103 physical sciences0202 electrical engineering electronic engineering information engineeringbusiness
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Partial discharge of gel insulated high voltage power modules subjected to unconventional voltage waveforms

2016

Performances and duration of the new generation of high voltage power electronic components are dependent on dielectric materials aim to insulating their internal terminals. The presence of defects, some due to faults generated during the manufacturing process, but also due to the internal design of layers and connections, can cause local enhancements of electric field and consequently possible activity of partial discharges phenomena or other effects (aging, tracking) that may result in reduction of device reliability. Furthermore, the usage of unconventional voltage waveforms, like square waves or pulse width modulated waves, additionally increases the electrical aging of the insulation s…

010302 applied physicsMaterials sciencebusiness.industryAcoustics020208 electrical & electronic engineeringElectrical engineeringHigh voltage02 engineering and technologyInsulated-gate bipolar transistor01 natural sciencesSettore ING-IND/31 - ElettrotecnicaReliability (semiconductor)Partial Discharge Gel insulation IGBTvisual_artInsulation systemPower module0103 physical sciencesElectronic componentPartial discharge0202 electrical engineering electronic engineering information engineeringvisual_art.visual_art_mediumbusinessVoltage2016 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP)
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Partial discharge detection and localization along medium voltage cables

2017

In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.

010302 applied physicsMaterials sciencebusiness.industryAcousticsElectronic Optical and Magnetic Material01 natural sciencesPulse (physics)PD measurementSettore ING-IND/31 - Elettrotecnica0103 physical sciencesPartial dischargeWirelessPower cablePD localizationPartial DischargeElectrical and Electronic EngineeringbusinessVoltage
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Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

2018

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section…

010302 applied physicsMaterials sciencebusiness.industryBand gapGeneral EngineeringResonance02 engineering and technology021001 nanoscience & nanotechnologyAntiresonance01 natural sciencesStanding waveResonatorQ factor0103 physical sciencesReflection (physics)Optoelectronics0210 nano-technologybusinessSpurious relationshipJournal of Vibration and Acoustics
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