Search results for "Arsenide"

Specificity and Sensitivity Characterization of a Gallium Arsenide Resonant Bio-Sensor

2018

International audience; The characterization of the performances of a Gallium Arsenide (GaAs) based biosensor, in terms of sensitivity and specificity, is reported. The design of the sensor consists in a resonant membrane fabricated in GaAs crystal that operates at shear modes of bulk acoustic waves generated by lateral field excitation. The transducer element was fabricated by using typical clean room microfabrication techniques. The backside of the membrane is functionalized by a self-assembled monolayer (SAM) of alkanethiols to immobilize bio-receptors, which will allow the specific capture of the analyte of interest. The theoretical sensitivity of the sensor had been determined by model…

Artificial dielectric optical structures: A challenge for nanofabrication

1998

Diffractive optical components can be made using multiple level kinoforms or single level artificial dielectric structures. The latter require the fabrication of pillars of equal depth but differing width and spacing. As a demonstration device, the diffractive optic equivalent of a wedge has been made in GaAs for use at 1.15 μm. The need for all pillars to have the same height was met by using a selective etch and a very thin etch-stop layer on AlGaAs. The experimental diffraction efficiency was 87.8%, among the best ever obtained and close to the theoretical maximum of 97.6%. © 1998 American Vacuum Society.

Process Development for Wet-Chemical Surface Functionalization of Gallium Arsenide Based Nanowires

2019

Alkylsilyl compounds as enablers of atomic layer deposition: analysis of (Et3Si)3As through the GaAs process

2016

A new chemistry has been developed to deposit GaAs, the quintessential compound semiconductor. The ALD process is based on a dechlorosilylation reaction between GaCl3 and (Et3Si)3As. Characteristic ALD growth was demonstrated, indicating good applicability of the alkylsilyl arsenide precursor. ALD of GaAs produced uniform, amorphous and stoichiometric films with low impurity content. This was done with saturating growth rates and an easily controlled film thickness. Crystallization was achieved by annealing. Even though the growth rate strongly decreased with increasing deposition temperature, good quality film growth was demonstrated at 175 to 200 °C, indicating the presence of an ALD wind…

Influence of a Thiolate Chemical Layer on GaAs (100) Biofunctionalization: An Original Approach Coupling Atomic Force Microscopy and Mass Spectrometr…

2013

International audience; Widely used in microelectronics and optoelectronics; Gallium Arsenide (GaAs) is a III-V crystal with several interesting properties for microsystem and biosensor applications. Among these; its piezoelectric properties and the ability to directly biofunctionalize the bare surface, offer an opportunity to combine a highly sensitive transducer with a specific bio-interface; which are the two essential parts of a biosensor. To optimize the biorecognition part; it is necessary to control protein coverage and the binding affinity of the protein layer on the GaAs surface. In this paper; we investigate the potential of a specific chemical interface composed of thiolate molec…