Search results for "BAND"
showing 10 items of 2610 documents
Random Structural Modification of a Low-Band-Gap BODIPY-Based Polymer
2017
International audience; A BODIPY thiophene polymer modified by extending conjugation of the BODIPY chromophore is reported. This modification induces tunability of energy levels and therefore absorption wavelengths in order to target lower energies.
Impact of anionic system modification on the desired properties for CuGa(S1−Se )2 solid solutions
2021
Abstract One of promising directions of the modern solar cells’ development is related to the use of the ternary chalcopyrite crystals (CuInS2, CuGaS2 etc.) and their solid solutions as efficient light absorbing layers. Unfortunately, so far there is no systematic research linking chemical composition to useful properties allowing their optimization to increase the efficiency of solar cells. Therefore, we report the results of the detailed theoretical studies of the structural, electronic, and optical properties for the series of CuGa(S1−xSex)2 solid solutions (x = 0, 0.25, 0.5, 0.75, 1) in the framework of the density functional theory. For this purpose, crystal structures are analyzed wit…
One-step electrochemical synthesis and physico-chemical characterization of CdSe nanotubes
2013
Abstract Stoichiometric CdSe nanotubes (NTs) with a length of ∼700 nm have been successfully grown by one-step electrochemical technique into anodic alumina membranes. Cyclovoltammetric method has been performed using porous anodic alumina as template electrode and an electrochemical bath containing Cd 2+ ions and SeO 2 . The as-prepared NTs have been identified as face-centred-cubic CdSe by XRD, while micro-Raman analysis reveals the typical peaks of nanostructured CdSe. The stoichiometric deposition of CdSe NTs formation is suggested by EDX analysis, with an average atomic percentage of Cd:Se of ∼0.93. Photoelectrochemical measurements reveal that CdSe NTs are photoactive materials with d…
Electronic Structure of Oxygen Dangling Bond in GlassySiO2: The Role of Hyperconjugation
2003
The electronic structure and the nature of optical transitions in oxygen dangling bond in silica glass, the nonbridging oxygen hole center (NBOHC), were calculated. The calculation reproduced well the peak positions and oscillator strengths of the well-known optical absorption bands at 2.0 and 4.8 eV, and of the recently discovered absorption band at 6.8 eV. The 2.0 eV band was attributed to transition from the $\ensuremath{\sigma}$ bond between Si and dangling oxygen to nonbonding $\ensuremath{\pi}$ orbital on the dangling oxygen. The uniquely small electron-phonon coupling associated with the 2.0 eV transition is explained by stabilization of Si-O bond in the excited state by hyperconjuga…
Thickness identification of atomically thin InSe nanoflakes on SiO2/Si substrates by optical contrast analysis
2015
Abstract Single layers of chalcogenide semiconductors have demonstrated to exhibit tunable properties that can be exploited for new field-effect transistors and photonic devices. Among these semiconductors, indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin nanosheets are essential. Here, we employ a transfer matrix approach to numerically calculate the optical contrast between thin InSe flakes and commonly used SiO2/Si substrates, which nicely re…
Mechanochemical Synthesis of Sn(II) and Sn(IV) Iodide Perovskites and Study of Their Structural, Chemical, Thermal, Optical and Electrical Properties
2019
Phase‐pure CsSnI3, FASnI3, Cs(PbSn)I3, FA(PbSn)I3 perovskites (FA = formamidinium = HC(NH2)2+) as well as the analogous so‐called vacancy‐ordered double perovskites Cs2SnI6 and FA2SnI6 are mechanochemically synthesized. The addition of SnF2 is found to be crucial for the synthesis of Cs‐containing perovskites but unnecessary for hybrid ones. All compounds show an absorption onset in the near‐infrared (NIR) region, which makes them especially relevant for photovoltaic applications. The addition of Pb(II) and SnF2 is crucial to improve the electronic properties in 3D Sn(II)‐based perovskites, in particular their charge carriers mobility (≈0.2 cm2 Vs−1) which is enhanced upon reduction of the …
Efficient wide band gap double cation – double halide perovskite solar cells
2017
In this work we study the band gap variation and properties of the perovskite compound Cs0.15FA0.85Pb(BrxI1−x)3 as a function of the halide composition, with the aim of developing an efficient complementary absorber for MAPbI3 in all-perovskite tandem devices. We have found the perovskite stoichiometry Cs0.15FA0.85Pb(Br0.7I0.3)3 to be a promising candidate, thanks to its band gap of approximately 2 eV. Single junction devices using this perovskite absorber lead to a maximum PCE of 11.5%, among the highest reported for solar cells using perovskites with a band gap wider than 1.8 eV.
Investigation of absorber and heterojunction in the pure sulphide kesterite
2021
This paper aims to study the properties of the absorber layer and the heterojunction in kesterite solar cells. The Cu2ZnSnS4 (CZTS) thin films were layered on a glass substrate from a colloidal solution of metal salts and thiourea dissolved in a mixture of water and ethanol and deposited by spin coating technique. The samples were then heat treated in a furnace, in the presence of sulphur powder and under a nitrogen gas flow. The results revealed the formation of homogeneous layers of a pure kesterite phase of CZTS crystallites after heat treatment with correct stoichiometry and oxidation states. The optical transmission measurements indicate an energy band-gap of 1.4 eV and an absorption c…
Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
2020
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash
Design of a 1 kW output power Folded Waveguide TWT operating in ka-band
2019
A Ka-band Serpentine Folded Waveguide Travelling Wave Tube (TWT) has been designed. The imposed design parameters values in terms of high power, high load, wide bandwidth, low weight, along with a structure manufactured with planar technique or by means of a micro milling process, have been obtained. Small signal simulations have been carried out with an in-house software for interaction impedance evaluation. The commercial electromagnetic simulation code CST Suite has been used for dispersion diagram prediction. An optimization of the one-dimensional software, normally used for large-signal simulation in coupled cavity TWTs (“Computer Program for Analysis of Coupled-cavity Travelling-wave-…