Search results for "BAND"
showing 10 items of 2610 documents
<title>F-type centers in LiBaF<formula><inf><roman>3</roman></inf></formula> crystals</title>
2003
A comparative study of optical properties of thermochemically reduced undoped LiBaF3 crystals is reported. In LiBaF3 crystals obtained or treated in a reducing atmosphere an absorption band at 240 nm and a corresponding luminescence band at 505 nm are observed at 85 K. The main constituent of the center may be an anion vacancy with a trapped electron (an F-type center in LiBaF3 crystals).© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Tunable Wide‐Bandgap Monohalide Perovskites
2020
Herein the mechanochemical synthesis of inorganic as well as hybrid organic-inorganic monohalide perovskites with tunable bandgaps is reported. It is shown that the bandgap bowing known for iodide mixed Sn-Pb perovskites is also present in the pure bromide analogous. This results in technologically very interesting materials with bandgaps in the range of 1.7-1.9 eV. Similar bandgap perovskites are typically achieved by mixing two halides that are prone to segregate over time. This limits the achievable open circuit voltage. For monohalide perovskites this problem is eliminated, making these materials especially promising wide bandgap absorbers for tandem solar cells. Perovskite Thin-film Ph…
Comparativeab initiostudy of half-Heusler compounds for optoelectronic applications
2010
For the advancement of optoelectronic applications, such as thin-film solar cells or laser diodes, there is a strong demand for new semiconductor materials with tailored structural and electronic properties. The eight-electron half-Heusler compounds include many promising materials with a big variety of lattice constants and band gaps. So far only a small number of them have been investigated. With the help of ab initio calculations, we have studied all possible configurations of ternary 1:1:1 compounds in the half-Heusler structure. We have investigated 648 half-Heusler materials, including compounds of the types I-I-VI, I-II-V, I-III-IV, II-II-IV, and II-III-III. For all compounds, we hav…
Ab initio study of the mechanical and electronic properties of scheelite-type XWO4(X = Ca, Sr, Ba) compounds
2017
The structural, mechanical, and electronic properties of scheelite-type CaWO4, SrWO4, and BaWO4 have been investigated using density-functional theory (DFT) within the generalized-gradient approximation (GGA). In particular, we have studied the effect of pressure in the crystal structure, elastic constants [Formula: see text], elastic moduli ([Formula: see text], [Formula: see text] and [Formula: see text]), and elastic anisotropy. We have also investigated the band structure of the three studied compounds and the effect of pressure in their electronic bandgap. The obtained results compare well with experimental results regarding the high-pressure (HP) behavior of the crystal structure. Th…
Energy structure and electro-optical properties of organic layers with carbazole derivative
2014
Abstract Phosphorescent organic light emitting diodes are perspective in lighting technologies due to high efficient electroluminescence. Not only phosphorescent dyes but also host materials are important aspect to be considered in the devices where they are a problem for blue light emitting phosphorescent molecules. Carbazole derivative 3,6-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole (TCz1) is a good candidate and has shown excellent results in thermally evaporated films. This paper presents the studies of electrical properties and energy structure in thin films of spin-coated TCz1 and thermally evaporated tris[2-(2,4-difluorophenyl)pyridine]iridium(III) (Ir(Fppy)3). The 0.46 eV difference …
I-II-V half-Heusler compounds for optoelectronics:Ab initiocalculations
2010
Half-Heusler compounds $XYZ$ crystallize in the space group $F\overline{4}3m$ and can be viewed as a zinc-blende-like ${(YZ)}^{\ensuremath{-}}$ lattice partially filled with He-like ${X}^{+}$ interstitials. In this work, we investigated I-II-V (eight-electrons) half-Heusler compounds by first-principles calculations in order to find suitable semiconductors for optoelectronics such as Cd-free buffer layer materials for chalcopyrite-based thin-film solar-cell devices. We report a systematic examination of band gaps and lattice parameters, depending on the electronegativities and the ion radii of the involved elements. Half-Heusler buffer materials should have a band gap of more than 2 eV to a…
Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes
2006
The negative capacitance frequently observed at low frequencies in organic light-emitting diodes (LEDs) is explained as a signature of sequential electron injection at the organic/metal interface first to states in the bandgap in the dipole layer and then to bulk states. The negative capacitance occurs when the interfacial states depart from equilibrium with the metal Fermi level due to an increasing rate of hopping to the bulk states. A simple kinetic model compares well with the experimental results and provides a new tool to investigate interfacial properties for improving the performance of organic LEDs.
Effect of Charge Transfer in Magnetic-Plasmonic Au@MOx (M = Mn, Fe) Heterodimers on the Kinetics of Nanocrystal Formation
2015
Heteronanoparticles represent a new class of nanomaterials exhibiting multifunctional and collective properties, which could find applications in medical imaging and therapy, catalysis, photovoltaics, and electronics. This present work demonstrates the intrinsic heteroepitaxial linkage in heterodimer nanoparticles to enable interaction of the individual components across their interface. It revealed distinct differences between Au@MnO and Au@Fe3O4 regarding the synthetic procedure and growth kinetics, as well as the properties to be altered by the variation of the electronic structure of the metal oxides. The chemically related metal oxides differ concerning their band gap; while MnO is a M…
High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric
2009
We demonstrate 100 ns write/erase speed of single-walled carbon nanotube field-effect transistor (SWCNT-FET) memory elements. With this high operation speed, SWCNT-FET memory elements can compete with state of the art commercial Flash memories in this figure of merit. The endurance of the memory elements is shown to exceed 104 cycles. The SWCNT-FETs have atomic layer deposited hafnium oxide as a gate dielectric, and the devices are passivated by another hafnium oxide layer in order to reduce surface chemistry effects. We discuss a model where the hafnium oxide has defect states situated above, but close in energy to, the band gap of the SWCNT. The fast and efficient charging and discharging…
The effect of band gap alignment on the hole transport from semiconducting block copolymers to quantum dots
2013
Semiconducting hole transporting block copolymers were chemically modified to adjust their energy levels to that of CdSe/CdS/CdZnS red quantum dots. Hybrids with optimized energy levels could be used to build strongly improved quantum dot based LEDs (QLEDs).