Search results for "BAND"
showing 10 items of 2610 documents
ESR and PL centers induced by gamma rays in silica
1996
We have studied the point defects created by γ irradiation in various types of commercial silica glasses, including both natural and synthetic samples, with different OH content, in the low dose regime (0.05–100 Mrad). We found that the growth rate of E′ centers depends strongly on the silica type, ranging from 2 × 1015 cm−3 Mrad−1 to 6 × 1017 cm−3 Mrad−1. Samples of natural silica are rather susceptible to γ ray exposure, as E′ concentration saturates (typically 5 × 1017 cm−3) for doses as low as a few Mrads. For both synthetic and natural samples, the radiation hardness is higher in wet than in dry silica. Moreover, we found a strict correlation between the concentration of E′ centers and…
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Luminescence Properties of ZnO Nanocrystals and Ceramics
2008
The luminescence excitation spectra, luminescence spectra and the nanosecond-scale decay kinetics were studied. The ZnO and ZnO:Al nanopowders were prepared by vaporization-condensation in a solar furnace using different raw powders: commercial, hydrothermal and those obtained by plasma synthesis. Exciton-phonon as well as exciton-exciton interaction processes in nanopowders, a bulk crystal and ZnO ceramics were studied and compared. The fast decay and low afterglow intensity of ZnO nanopowders and ceramics support these materials for scintillators.
β decay studies of n-rich Cs isotopes with the ISOLDE Decay Station
2017
R. Lica et al. -- 14 pags., 7 figs., tab. -- Open Access funded by Creative Commons Atribution Licence 3.0
Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance
2019
International audience; The last couple of years have seen the development of Depleted Monolithic Active Pixel Sensors (DMAPS) fabricated with a process modification to increase the radiation tolerance. Two large scale prototypes, Monopix with a column drain synchronous readout, and MALTA with a novel asynchronous architecture, have been fully tested and characterized both in the laboratory and in test beams. This showed that certain aspects have to be improved such as charge collection after irradiation and the output data rate. Some improvements resulting from extensive TCAD simulations were verified on a small test chip, Mini-MALTA. A detailed cluster analysis, using data from laboratory…
Inclusive production of ρ0(770), f0(980) and f2(1270) mesons in νμ charged current interactions
2001
The inclusive production of the meson resonances $\rho^{0}(770)$, $f_0(980)$ and $f_2(1270)$ in neutrino-nucleus charged current interactions has been studied with the NOMAD detector exposed to the wide band neutrino beam generated by 450 GeV protons at the CERN SPS. For the first time the $f_{0}(980)$ meson is observed in neutrino interactions. The statistical significance of its observation is 6 standard deviations. The presence of $f_{2}(1270)$ in neutrino interactions is reliably established. The average multiplicity of these three resonances is measured as a function of several kinematic variables. The experimental results are compared to the multiplicities obtained from a simulation b…
The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2
2000
Abstract The controversial optical absorption band centered at 4.8 eV, which is present in nearly all irradiated silicas, was investigated. It is caused by at least two different defects: non-bridging oxygen hole center (NBOHC) and interstitial ozone (O3). Both species have absorption bands at 4.8 eV, the O3-related band is identified by its susceptibility to bleaching by 4 to 5 eV photons, by a smaller halfwidth and by its independence from the NBOHC-associated 1.9 eV photoluminescence (PL) band. The contribution of NBOHC to the 4.8 eV band is dominant in most cases, while O3 is important in F2 excimer laser-irradiated samples of oxygen-rich glassy SiO2.
The behavior of interstitial oxygen atoms induced by F2 laser irradiation of oxygen-rich glassy SiO2
2002
Abstract Interstitial oxygen atoms in glassy silicon dioxide were created by photolysis of pre-existing interstitial oxygen molecules O 2 with a fluorine excimer laser (7.9 eV). The concentration of atomic oxygen interstitials was indirectly monitored by the disappearance and subsequent recovery of interstitial molecules which were monitored by their 1272 nm photoluminescence band. Most of the oxygen interstitials (>95%) are immobile at room temperature. The onset of their mobility occurs between 200 and 400 °C where around 95% of them recombine to form O 2 molecules. The high stability of interstitial oxygen atoms is consistent with the theoretical prediction that they are incorporated int…
Relaxation of electronic excitations in strontium titanate
2002
The transient absorption spectra and kinetics were studied for undoped, lead doped and high purity SrTiO 3 single crystals. The pulsed electron beam induced transient absorption is studied in all crystals. The strong absorption at 0.8 v eV was observed only in high purity SrTiO 3 . This absorption is suggested to arise from intrinsic electron polaron. The bound electron polarons are likely responsible for absorption band at 1.4 v eV. The main luminescence band under excitation pulse is observed at 2.75 v eV. The luminescence decay is faster than that of transient absorption.
The experimental observation of the potential barrier for self-trapped exciton decay into F-H pair in KCl-Na crystals
1995
Abstract The optical absorption induced by the electron pulse irradiation of Na+ doped KCl has been measured. Transient optical absorption band of FA centers was observed at 80 K (LNT). The temperature dependence of FA center formation was studied. It is proposed that the obtained activation energy originates from the potential barrier between the STE perturbed by the cation impurity and the nearest neighbour FA-H pair. The mechanism of the suppression of the defect formation by the monovalent cation impurity in alkali halide crystals is discussed.