Search results for "BAND"
showing 10 items of 2610 documents
Cathodoluminescence and photoluminescence study of plastically deformed ZnTe bulk single crystals
2001
Samples of zinc telluride bulk single crystals, which were deformed in uniaxial compression, have been studied by photoluminescence (PL) and cathodoluminescence (CL). As a particular feature the deformed samples present a PL emission band peaked at 603 nm, whose intensity increases as the plastic deformation does. This band is related to the density of dislocations produced during the interaction of slip systems. This hypothesis is supported by CL images. which reveal the activation of the successive slip systems corresponding to different levels of deformation.
Nature of the blue luminescence bands in PbWO4
1997
Abstract The photoluminescence spectrum of PbWO 4 is composed of blue and green bands, previously attributed to the regular WO 4 group and to the defect-related WO 3 group, respectively. Untill now only green emission was observed in the thermostimulated luminescence (TSL) above 77 K. Investigation of the TSL spectra starting from 20 K indicates that the blue band, being definitely present at least in the 28 K TSL peak, is also due to recombination emission at defect sites.
γ-ray-induced bleaching in silica: Conversion from optical to paramagnetic defects
2000
We report experimental results on optical and ESR measurements performed in $\ensuremath{\gamma}$-irradiated natural silica samples having different content of OH groups. A partial bleaching of the optical absorption band ${B}_{2\ensuremath{\beta}}$ at 5.15 eV and the related photoluminescence emissions at 3.1 eV and 4.2 eV is observed together with the growth of an ESR doublet split by 11.8 mT. The kinetics of the two processes as a function of the $\ensuremath{\gamma}$ dose are correlated and depend on the OH content. Our experiments indicate the occurrence of a $\ensuremath{\gamma}$-ray-induced conversion, from optically active centers to paramagnetic ones and vice versa, changing the re…
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.
2014
International audience; We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, an…
Vertical stacks of small InAs/GaAs self-assembled dots: resonant and non-resonant excitation
2003
4 páginas, 2 figuras.-- PACS: 78.67.Hc; 73.21.La; 78.55.Cr.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.
Optical properties of phosphorous-related point defects in silica fiber preforms
2009
Physical review / B 80, 205208 (2009). doi:10.1103/PhysRevB.80.205208
Study of the germanium luminescence in silica: from non-controlled impurity to germano-silicate core of telecommunication fiber preforms
2003
Abstract We have studed luminescence properties of doped silica with different concentrations of germanium. The basic luminescence parameters such as spectral dependencies, decay kinetics and polarization at different temperatures were measured. Three spectral ranges 3.5–5.5 eV(I), 5.5–7 eV(II), 7–8 eV(III) in the optical transparency range of silica could be chosen from these data. Range I possesses a weak variation of basic parameters of luminescence of the germanium related oxygen deficient center with the change of luminescence center concentration from extremely low in pure silica to the germano-silica core of optical telecommunication fiber preforms. The temperature dependence of lumi…
Luminescence and absorption spectroscopy of Sn-related impurity centers in silica
2006
We report an experimental study on the absorption and luminescence spectra of oxygen deficient point defects in Sn-doped silica. The absorption band at 4.9 eV (B2β band) and the two related photoluminescence bands at ∼4.2 eV (singlet-singlet emission, S1 → S0) and at ∼3.2 eV (triplet-singlet emission, T1 → S0), linked by a thermally activated T1 → S1 inter-system crossing process (ISC), are studied as a function of temperature from 300 to 20 K. This approach allows us to investigate the dynamics properties of the matrix in the surroundings of the point defects and the effects of local disorder on the two relaxation processes from S1: the radiative channel to S0 and the ISC process to T1. We…
Luminescence of fluorine doped silica glass
2003
Abstract The role of fluorine doping on silica properties was studied by luminescence methods. Non-doped samples of the same preparation technology possess an absorption band at 7.6 eV on the level of 2 cm−1. A trace of this band in the fluorine-doped sample is on the level of 0.1 cm−1. In both samples 7.6 eV photons as well as ionizing irradiation (X-ray, electron beam) excite photoluminescence of so-called oxygen deficient centers with a blue (2.7 eV) and a UV band (4.4 eV). The luminescence of the fluorine doped sample increases with dose many times from the initial low level for the same excitation. Also, thermally stimulated luminescence appears after irradiation. The energetic yield u…
Luminescence activity of surface and interior Ge-oxygen deficient centers in silica
2005
We report a comparative study on the optical activity of surface and interior Ge–oxygen deficient centers in pressed porous and sol–gel Ge-doped silica, respectively. The experimental approach is based on the temperature dependence of the two photoluminescence bands at 4.2 (singlet–singlet emission, S1! S0) and 3.1 eV (triplet–singlet emission, T1! S0), excited within the absorption band at about 5 eV. Our data show that the phonon assisted intersystem crossing process, linking the two excited electronic states, more effective for surface than for interior centers in the temperature range 5–300 K. For both centers, a distribution of the activation energies of the process is found. Based on th…