6533b7d7fe1ef96bd1267a7a

RESEARCH PRODUCT

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

E. MuñozJm José Maria UlloaAtsushi NakamuraAdrian HierroVicente Muñoz-sanjoséPierre LefebvrePierre LefebvreM. SuzukiManuel Lopez-ponceM.c. Martínez-tomásJiro TemmyoSaid Agouram

subject

PhotoluminescenceMaterials sciencebusiness.industryMechanical EngineeringNanowireBioengineeringHeterojunctionGeneral ChemistryMicrostructureMechanics of MaterialsQuantum dotRadiative transfer[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]OptoelectronicsGeneral Materials ScienceElectrical and Electronic EngineeringDiffusion (business)businessElectronic band structure

description

International audience; We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, and is considered in order to correctly identify quantum effects in the ZnCdO/ZnO MQWs.

10.1088/0957-4484/25/25/255202https://hal.archives-ouvertes.fr/hal-01009919