0000000000293303

AUTHOR

Jm José Maria Ulloa

showing 6 related works from this author

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

2014

International audience; We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, an…

PhotoluminescenceMaterials sciencebusiness.industryMechanical EngineeringNanowireBioengineeringHeterojunctionGeneral ChemistryMicrostructureMechanics of MaterialsQuantum dotRadiative transfer[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]OptoelectronicsGeneral Materials ScienceElectrical and Electronic EngineeringDiffusion (business)businessElectronic band structure
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Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection

2015

This work presents a comprehensive optical characterization of Zn1−xMgxO thin films grown by spray pyrolysis (SP). Absorption measurements show the high potential of this technique to tune the bandgap from 3.30 to 4.11 eV by changing the Mg acetate content in the precursor solution, leading to a change of the Mg-content ranging from 0 up to 35%, as measured by transmission electron microscopy-energy dispersive x-ray spectroscopy. The optical emission of the films obtained by cathodoluminescence and photoluminescence spectroscopy shows a blue shift of the peak position from 3.26 to 3.89 eV with increasing Mg incorporation, with a clear excitonic contribution even at high Mg contents. The lin…

Materials sciencePhotoluminescenceBand gapAnalytical chemistryCathodoluminescence02 engineering and technology01 natural sciencessymbols.namesakeStokes shift0103 physical sciencesMaterials ChemistryEmission spectrumElectrical and Electronic EngineeringSpectroscopyAbsorption (electromagnetic radiation)010302 applied physicsTelecomunicacionesbusiness.industry021001 nanoscience & nanotechnologyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsBlueshiftsymbolsOptoelectronicsElectrónica0210 nano-technologybusiness
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Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons

2021

Abstract Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons in self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, as a route to enhance the absorption in mid-infrared photodetectors. In this system, two localized surface plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of the light intensity in the underlying GaAs. In the case of the long-wavelength mode the enhancement is as large as 100 near the interface, and persists at depths down to 50 nm. We show numerically t…

Materials sciencequantum wellQC1-999Infrared spectroscopy02 engineering and technologyMetal oxide nanoparticles01 natural sciencesSelf assembledmetal-oxide0103 physical sciencesElectrical and Electronic Engineeringintersubband transition010306 general physicsQuantum wellcdolocalized surface plasmonbusiness.industryPhysics021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsOptoelectronics0210 nano-technologybusinessBiotechnologyLocalized surface plasmonNanophotonics
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Topology driven g-factor tuning in type-II quantum dots

2017

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II InAs/GaAsxSb1−x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic →k⋅→p and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.

ExcitonVoltage controlGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyTopology01 natural sciencessymbols.namesakeCondensed Matter::Materials Science0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physicsQuantumPhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed Matter::OtherCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDipoleSemiconductorsQuantum dotSISTEMAS HAMILTONIANOSsymbols0210 nano-technologyHamiltonian (quantum mechanics)
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Self-assembled MgxZn1−xO quantum dots (0 ≤ x ≤ 1) on different substrates using spray pyrolysis methodology

2013

By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled MgxZn1−xO quantum dots (size [similar]4–6 nm) in the overall range of compositions 0 ≤ x ≤ 1 on c-sapphire, Si (100) and quartz substrates. Composition of the quantum dots was determined by means of transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDAX) and X-ray photoelectron spectroscopy. Selected area electron diffraction reveals the growth of single phase hexagonal MgxZn1−xO quantum dots with composition 0 ≤ x ≤ 0.32 by using a nominal concentration of Mg in the range 0 to 45%. Onset of Mg concentration about 50% (nominal) forces the hexagonal lattice to undergo a p…

TelecomunicacionesPhase transitionMaterials scienceAnalytical chemistry02 engineering and technologyGeneral ChemistryElectronCubic crystal system010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences0104 chemical sciencesCrystallographyX-ray photoelectron spectroscopyQuantum dotGeneral Materials ScienceHexagonal latticeSelected area diffraction0210 nano-technologyHigh-resolution transmission electron microscopyCrystEngComm
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Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: effect of thermal annealing

2013

International audience; ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.

010302 applied physicsTelecomunicacionesPhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)Annealing (metallurgy)business.industryWide-bandgap semiconductorNanowire02 engineering and technology021001 nanoscience & nanotechnologyMicrostructure01 natural sciencesHomogeneous distributionRadiative efficiency0103 physical sciences[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Optoelectronics0210 nano-technologybusinessWurtzite crystal structure
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