6533b831fe1ef96bd12990ab
RESEARCH PRODUCT
Topology driven g-factor tuning in type-II quantum dots
Benito AlénVictor Lopez-richardG. E. MarquesJm José Maria UlloaL. WeviorE. R. Cardozo De OliveiraJ. M. LlorensAlberto García-cristóbalV. Lopes-oliveiraG. Quiang-haiMarcio D. Teodorosubject
ExcitonVoltage controlGeneral Physics and AstronomyFOS: Physical sciences02 engineering and technologyTopology01 natural sciencessymbols.namesakeCondensed Matter::Materials Science0103 physical sciencesMesoscale and Nanoscale Physics (cond-mat.mes-hall)010306 general physicsQuantumPhysicsCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed Matter::OtherCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDipoleSemiconductorsQuantum dotSISTEMAS HAMILTONIANOSsymbols0210 nano-technologyHamiltonian (quantum mechanics)description
We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II InAs/GaAsxSb1−x quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton g factor, which are modulated by the applied bias. The results are explained in the frame of realistic →k⋅→p and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the InAs/GaAs realm.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-10-24 |