Search results for "BAND"
showing 10 items of 2610 documents
Electronic and optical properties of CeO 2 from first principles calculations
2016
International audience; First-principles calculations of the electronic structure of CeO2 nanoparticles (NPs) were performed to investigate published experimental data obtained by different spectroscopies. The main features of the valence and conduction bands have been analyzed from the total and partial density of states. Several functionals were applied to interpret and quantify the optical properties, including the dielectric function, extinction coefficient and refractive index. It is found that the on-site hybrid functional B3PW91 modelled most suitably the band gap region of CeO2 NPs and consequently gave a more accurate band gap value. It also agreed very well with the experimental v…
A Theoretical Study on the Low-Lying Excited States of 2,2′:5′,2′′-Terthiophene and 2,2′:5′,2′′:5′′,2′′′-Quaterthiophene
2005
The nature and properties of the low-lying singlet and triplet valence excited states of 2,2':5',2-terthiophene (terthiophene) and 2,2':5',2:5,2'-quictterthiophene (tetrdthiophene) are discussed on the basis of high-level ab initio. computations. The spectrascopic features determined experimentally for short α-oligothiophenes are rationalised on theoretical grounds. Special attention is devoted to the nonradiative decay process through intersystem crossing (ISC) from the singlet to the triplet manifold, which is known to be relatively less efficient in tetrathiophene. Along the geometry relaxation of the S 1 state of terthiophene, the S' 1 and T 2 states become degenerate, which leads. to a…
VEH electronic structure of Si60
1993
Abstract We present a valence effective Hamiltonian (VEH) theoretical investigation on the electronic structure of Si60. The VEH one-electron energy level distribution calculated for Si60 is used to predict the ionization potential (7.86 eV), electron affinity (6.62 eV) and HOMO-LUMO energy gap (1.24 eV) of Si60. We also report the first allowed electronic transitions of Si60. The results are compared with other theoretical levels and with those calculated for C60.
Theoretical Study of the Electronic Spectrum of Imidazole
1996
The complete active space (CAS) self-consistent field (SCF) method and multireference second-order perturbation theory (CASPT2) have been used to study the electronic spectrum of imidazole and the imidazolium ion. The calculations comprise a large number of, both singlet and triplet, valence and Rydberg excited states. A newly developed continuum model has been used to compute solvatochromic shifts. In the gas phase the first and second π → π* excited singlet valence states of imidazole are computed at 6.72 and 7.15 eV, and they shift to 6.32 and 6.53 eV upon solvation. The gas-phase values are somewhat too large (≈0.3 eV) due to an erroneous valence−Rydberg mixing in the CASSCF wave functi…
Valence electronic structure of C60: Theoretical analysis of photoemission data
1993
Abstract We present a theoretical investigation of the valence band photoemission spectra of C 60 using the nonempirical valence effective Hamiltonian (VEH) method. The VEH-DOVS curves calculated for the C 60 molecule are found to be in excellent agreement with synchrotron-radiation photoemission spectra reported for C 60 films. A detailed interpretation of all the photoemission bands is performed in the light of the VEH results.
Theoretical study on the effect of backbone conformation on the electronic structure of poly(di-n-butylsilane)
1993
Abstract We present the results of valence effective Hamiltonian (VEH) calculations on the electronic structure of poly(di-n-butylsilane) in its all-trans and 7/3 conformations. The band structure of all-trans conformation is analyzed in detail and the effects of the backbone conformation on the electronic and optical properties are studied. The VEH results for the 2/1 and 7/3 conformations are in excellent quantitative agreement with photoemission and UV-absorption data and show the reliability of the VEH method to deal with organopolysilanes.
Pressure Dependence of the Band Gaps and Charge Densities in Si
1994
The empirical local and nonlocal pseudopotentials of Si which can describe the electronic energy structure over a wide energy range of more than 20 eV from the bottom of the valence band is determined for different pressures. The nonlocality of the potential is described by the Gaussian model. The predictions for the linear and quadratic pressure coefficients are consistent with the experiment. The valence charge densities of Si under high pressure are studied. The forbidden X-ray factor F(222) is very stable under pressure and changes by less than 3% under volume changes of the order of 5%.
Theoretical calculations on the valence electronic structure of naphthalocyanine: comparison with experimental photoemission data
1993
Abstract We present a theoretical investigation of the electronic structure of metal-free 2,3-naphthalocyanine (2,3-H2Nc) using the valence effective Hamiltonian (VEH) technique. The VEH-DOVS curves obtained for 2,3-H2Nc are correlated with those calculated for naphthalene molecule and a one-to-one correspondence is found. From the electronic structure standpoint, naphthalocyanine has to be viewed as formed by joining four naphthalene moieties to the central carbon-nitrogen ring. An excellent quantitative agreement is found between VEH-DOVS curves and experimental photoemission data.
Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMR
2015
Half-metallic Co2MnSi-based Heusler compounds have attracted attention because they yield very high tunnelling magnetoresistance (TMR) ratios. Record TMR ratios of 1995% (at 4.2 K) are obtained from off-stoichiometric Co2MnSi-based magnetic tunnel junctions. This work reports on a combination of band structure calculations and spin-resolved and photon-polarisation-dependent photoelectron spectroscopy for off-stoichiometric Heusler thin films with the composition Co2Mn1.30Si0.84. Co and Mn are probed by magnetic dichroism in angle-resolved photoelectron spectroscopy at the 2p core level. In contrast to the delocalised Co 3d states, a pronounced localisation of the Mn 3d states is deduced fro…
First-principles calculations of surfaceHcenters inBaF2
2010
H center, a hole trapped at an interstitial anion site, placed on the 111 surface of Barium fluoride BaF2 has been studied by using density functional theory DFT with hybrid exchange potentials, namely, DFT-B3PW. Two different configurations of surface H center are investigated carefully. Both surface H-center systems have strong relaxations because of the surface effect. In the configuration that the interstitial fluorine atom is within the surface, named case 1 in this paper, the unpaired electron is almost equally distributed onto the two atoms of the H center, which is quite different from the bulk H-center case. The other configuration with one of the F atoms of the H center located ab…