Search results for "BAND"
showing 10 items of 2610 documents
From atomic to molecular Bose-Einstein condensates: a physically realizable term-crossing model for cold atom association
2010
Using an exact third-order NL di®erential equation for the molecular state probability, we develop a variational approach which enables us to construct highly accurate analytic approximations describing time dynamics of the coupled atom-molecular system in each of the interaction regimes. We show that the approximation describing time evolution of the molecular state probability both in the weak interaction limit and in the large detuning regime of the strong interaction limit can be written as a sum of two distinct terms; the ¯rst one, being a solution to a limit ¯rst-order NL equation, e®ectively describes the process of the molecule formation while the second one, being a scaled solution…
Flat-band superconductivity in periodically strained graphene : mean-field and Berezinskii–Kosterlitz–Thouless transition
2020
In the search of high-temperature superconductivity one option is to focus on increasing the density of electronic states. Here we study both the normal and s-wave superconducting state properties of periodically strained graphene, which exhibits approximate flat bands with a high density of states, with the flatness tunable by the strain profile. We generalize earlier results regarding a one-dimensional harmonic strain to arbitrary periodic strain fields, and further extend the results by calculating the superfluid weight and the Berezinskii–Kosterlitz–Thouless (BKT) transition temperature T BKT to determine the true transition point. By numerically solving the self-consistency equation, w…
Skyrmion formation due to unconventional magnetic modes in anisotropic multiband superconductors
2019
Multiband superconductors have a sufficient number of degrees of freedom to allow topological excitations characterized by skyrmionic topological invariants. In the most common, clean s -wave multiband systems, the interband Josephson and magnetic couplings favor composite vortex solutions, without a skyrmionic topological charge. It was discussed recently that certain kinds of anisotropies lead to hybridization of the interband phase difference (Leggett) mode with magnetic modes, dramatically changing the hydromagnetostatics of the system. Here we report this effect for a range of parameters that substantially alter the nature of the topological excitations, leading to solutions characteri…
Change of the vortex core structure in two-band superconductors at the impurity-scattering-driven s±/s++ crossover
2017
We report a nontrivial transition in the core structure of vortices in two-band superconductors as a function of interband impurity scattering. We demonstrate that, in addition to singular zeros of the order parameter, the vortices there can acquire a circular nodal line around the singular point in one of the superconducting components. It results in the formation of the peculiar “moat”-like profile in one of the superconducting gaps. The moat-core vortices occur generically in the vicinity of the impurity-induced crossover between s± and s++ states. peerReviewed
Variation of the optical absorption edge in AgGaS2 single crystals at high pressure
2003
In this paper the optical absorption edge of AgGaS 2 is measured as a function of pressure up to 26 GPa in order to verify the effect of the three phases transitions occurring in that pressure domain. The direct energy gap increases linearly with pressure at the rate of about 4.0 x 10 -2 eV GPa -1 up to 10.2 GPa. The absence of any discontinuity in the energy gap in the pressure range of 4.2-10.2 GPa confirms that the volume change, in the chalcopirite to monoclinic second-order transition, if it exists, is very small. When the pressure is raised above 10.2 GPa, the energy gap drops suddenly by about 1.1 eV and the spectral form of the absorption coefficient is typical of semiconductors wit…
Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure …
2003
In this paper we review some recent results on the electronic structure of III-VI layered semiconductors and its dependence under pressure, stressing the specific features that differentiate their behaviour from that of tetrahedrally coordinated semiconductors. We will focus on several unexpected results that have led to changes in the image that was currently accepted a few years ago. Intralayer bond angles change under pressure and the layer thickness remains virtually constant or increases. As a consequence, models based in intra- and inter-layer deformation potentials fail in explaining the low pressure nonlinearity of the band gap. Numerical-atomic-orbital/density-functional-theory ele…
New BEDT-TTF/[Fe(C5O5)3]3- Hybrid System: Synthesis, Crystal Structure, and Physical Properties of a Chirality-Induced α Phase and a Novel Magnetic …
2007
The paramagnetic and chiral anion [Fe(C5O5)3]3- (C5O52-=croconate) has been combined with the organic donor BEDT-TTF (=ET=bis(ethylenedithio)tetrathiafulvalene) to synthesize a novel paramagnetic semiconductor with the first chirality-induced alpha phase, alpha-(BEDT-TTF)5[Fe(C5O5)3].5H2O (1), and one of the few known paramagnetic molecular metals, beta-(BEDT-TTF)5[Fe(C5O5)3].C6H5CN (2). Both compounds present layers of BEDT-TTF molecules, with the alpha or beta packing modes, alternating with layers containing the high-spin S=5/2 Fe(III) anions and solvent molecules. In the alpha phase, the alternation of the chiral [Fe(C5O5)3]3- anions along the direction perpendicular to the BEDT-TTF cha…
Effects of Conduction Band Structure and Dimensionality of the Electron Gas on Transport Properties of InSe under Pressure
1996
We report Hall effect and resistivity measurements in InSe under pressure. The electron concentration strongly decreases under pressure in samples exhibiting 3D transport behaviour. This is explained by the existence of an excited minimum in the conduction band moving to lower energies under pressure. The related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. In samples exhibiting 2D behaviour the electron concentration remains constant. This behaviour, together with the pressure dependence of the Hall mobility, is consistent with a previous model which considers high mobility 3D electrons and low mobility 2D electrons to contribute to charge trans…
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
2017
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM…
Ab initio calculations of PbTiO 3 /SrTiO 3 (001) heterostructures
2016
We performed ab initio calculations for the PbTiO3/SrTiO3 (001) heterostructures. For both PbO and TiO2-terminations of the PbTiO3 (001) thin film, augmented on the SrTiO3 (001) substrate, the magnitudes of atomic relaxations Δz increases as a function of the number of augmented monolayers. For both terminations of the augmented PbTiO3 (001) nanothin film, all upper, third and fifth monolayers are displaced inwards (Δz is negative), whereas all second, fourth and sixth monolayers are displaced outwards (Δz is positive). The B3PW calculated PbTiO3/SrTiO3 (001) heterostructure band gaps, independently from the number of augmented layers, are always smaller than the PbTiO3 and SrTiO3 bulk band…