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RESEARCH PRODUCT
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
M. TingM. TingChristopher A. FrancisChristopher A. FrancisChristopher F McconvilleJeffrey W. BeemanM. JaquezM. JaquezWladek WalukiewiczWladek WalukiewiczKin Man YuSepher K. V. FarahaniJuan F. Sánchez-royoOscar D. DubonOscar D. Dubonsubject
Condensed matter physicsChemistryBand gapFermi levelGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSemimetalsymbols.namesakeBand bending0103 physical sciencessymbolsDirect and indirect band gaps010306 general physics0210 nano-technologyElectronic band structurePseudogapQuasi Fermi leveldescription
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM energy observed from the virtual crystal approximation is explained by a band anticrossing interaction between localized 3d states of Ni and the extended states of the NixCd1-xO alloy host. The resulting band structure explains the dependence between the composition and the electrical and optical properties of the allo...
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2017-11-14 | Journal of Applied Physics |