Search results for "BAND"
showing 10 items of 2610 documents
Ab initio electronic band structure calculation of InP in the wurtzite phase
2011
Abstract We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm , c = 0.6912 nm , and an internal parameter u = 0.371 , showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actu…
Effect of Pressure on Direct Optical Transitions of ?-InSe
2000
We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…
Experimental and theoretical investigation of Cr1-xScxN solid solutions for thermoelectrics
2016
The ScN- and CrN-based transition-metal nitrides have recently emerged as a novel and unexpected class of materials for thermoelectrics. These materials constitute well-defined model systems for investigating mixing thermodynamics, phase stability, and band structure aiming for property tailoring. Here, we demonstrate an approach to tailor their thermoelectric properties by solid solutions. The trends in mixing thermodynamics and densities-of-states (DOS) of rocksalt-Cr1-xScxN solid solutions (0 ≤ x ≤ 1) are investigated by first-principles calculations, and Cr1-xScxN thin films are synthesized by magnetron sputtering. Pure CrN exhibits a high power factor, 1.7 × 10−3 W m−1 K−2 at 720 K, en…
Magnetic and Electronic Properties ofRENiBi (RE = Pr, Sm, Gd-Tm, Lu) Compounds
2008
Resistivity and magnetic measurements were used to examine the ternary rare earth compounds RENiBi (RE = Pr, Sm, Gd-Tm, Lu). These compounds order antiferromagnetically with TN below 16 K (RE = Pr, Sm, Gd-Tm) or are paramagnetic (LuNiBi). For some of these compounds a metal–insulator transition was found. The metal–insulator transition temperature depends strongly on the preparation conditions. Both the magnetic ground states and the resistance behavior are in good agreement with electronic band structure calculations.
Transport measurements in InSe under high pressure and high temperature: shallow-to-deep donor transformation of Sn related donor impurities
2003
We have investigated the temperature dependence of the transport parameters of Sn-doped InSe at different pressures, up to 2.5 GPa. A noticeable change in the temperature dependence of all the transport parameters has been observed above 1.2 GPa. This fact is explained by assuming the transformation of Sn shallow donors into deep donors at a hydrostatic pressure of 1.1 GPa, and by taking into account the transfer of electrons from the absolute minimum to higher energy minima in the conduction band. At ambient pressure, the position of the Sn deep level is estimated to lie 75 ± 20 meV above the absolute conduction-band minimum.
Lattice and electronic contributions to the refractive index of CuWO4
2014
We report an investigation of the refractive index dispersion and anisotropy in CuWO4 by means of interference measurements in two extinction directions from mid infrared to the visible region of the energy spectrum. The analysis of the refractive index dispersion yields ϵ(∞) = 4.5(1) for light polarization parallel to the c-axis and ϵ(∞) = 5.3(1) with respect to the other extinction axis. In addition, we report reflectance measurements carried out from the far infrared to the near ultraviolet to study the lattice and electronic contributions to the refractive index of CuWO4. We have determined the wavenumbers of nine infrared active lattice modes and compared them with previous ab initio c…
Quantum Monte Carlo study of insulating state in NaV2O5
2003
Abstract Quantum Monte Carlo (QMC) methods are being increasingly used as complements to Hartree–Fock (HF) methods for computing the electronic structure of molecules and materials. We investigate the nature of the insulating state driven by electronic correlations in the ladder compound NaV 2 O 5 ; considered as a quarter-filled system. We use an extended Hubbard model (EHM) to study the role of on-site and inter-site Coulomb interaction. It is found that the insulating state in the charge-disordered phase of this compound take origin from the transfer of spectral density and dynamical fluctuations. Our calculation allows us also, to understand the origin of the insulating states above T C…
Structure and Properties of GdAuSn and the GdAuSn/MnAuSn System
2006
The crystal structure of GdAuSn was refined by means of single crystal X-ray diffraction. Band structure calculations based on the structural data confirmed the antiferromagnetic ground state and the metallic behaviour of GdAuSn. 119mSn, 155Gd and 197Au Mossbauer spectroscopic studies were used to verify the values of the hyperfine parameters that were given by the band structure calculations. Band structure calculations of MnAuSn confirmed that this half-Heusler compound belongs to the family of half-metallic ferromagnets. Magnetic susceptibility, conductivity and Mossbauer studies were used to characterize granular material based on the half-Heusler ferromagnet MnAuSn in the antiferromagn…
Electron–phonon effects on the direct band gap in semiconductors: LCAO calculations
2002
Abstract Using a perturbative treatment of the electron–phonon interaction, we have studied the effect of phonons on the direct band gap of conventional semiconductors. Our calculations are performed in the framework of the tight-binding linear combination of atomic orbitals (LCAO) approach. Within this scheme we have calculated the temperature and isotopic mass dependence of the lowest direct band gap of several semiconductors with diamond and zincblende structure. Our results reproduce the overall trend of available experimental data for the band gap as a function of temperature, as well as give correctly the mass dependence of the band gap on isotopic. A calculation of conduction band in…
Band Alignments in InxGa1–xP/GaAs Heterostructures Investigated by Pressure Experiments
2000
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