Search results for "BRI"
showing 10 items of 8668 documents
Key factors towards a high-quality additive manufacturing process with ABS material
2019
Abstract Additive Manufacturing technologies have gained a lot of popularity during the past years. The current challenge being the transition of this manufacturing technology from prototype oriented towards mass production. In order to achieve this, fabrication times and mechanical parameters must be improved. This paper aims to identify which are the parameters that have the highest influence on parts obtained with fused deposition modeling (FDM) technology from ABS material. In addition, this study identifies which are the most accurate methods to test the mechanical properties of FDM parts while still respecting ASTM standard for testing the tensile properties of plastics. It was found …
Mechanical properties of macroscopic magnetocrystals
2019
Abstract We studied experimentally and by numerical simulations the mechanical response of arrays of macroscopic magnetic spheres when an external stress is applied. First, the tensile strength of single chains and ribbons was analyzed. Then, simple cubic (cP), hexagonal (Hx) and hybrid (cP-Hx) structures, called here magnetocrystals , were assembled and subjected to tensile stress, bending stress and torsion until failure was reached. Atomistic crystalline structures are isotropic, but in the case of magnetocrystals, even when geometric isotropy is obeyed, dipolar magnetic interactions introduce a physical anisotropy which modifies, in a non-usual manner, the structures response to the kin…
Optimization of a laser ion source for $^{163}$Ho isotope separation
2019
To measure the mass of the electron neutrino, the “Electron Capture in Holmium-163” (ECHo) collaboration aims at calorimetrically measuring the spectrum following electron capture in 163Ho. The success of the ECHo experiment depends critically on the radiochemical purity of the 163Ho sample, which is ion-implanted into the calorimeters. For this, a 30 kV high transmission magnetic mass separator equipped with a resonance ionization laser ion source is used. To meet the ECHo requirements, the ion source unit was optimized with respect to its thermal characteristics and material composition by means of the finite element method thermal-electric calculations and chemical equilibrium simulation…
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Development, Characterization, and Testing of a SiC-Based Material for Flow Channel Inserts in High-Temperature DCLL Blankets
2018
This work has been carried out within the framework of the EUROfusion Consortium. The views and opinions expressed herein do not necessarily reflect those of the European Commission.
Structural phase transition in [(C2H5)4N][(CH3)4N]ZnCl4
2019
The hybrid crystal [(C2H5)4N][(CH3)4N]ZnCl4 was studied using several experimental methods. DSC studies revealed the first order phase transition to the high temperature phase at about 496 K. This phase transition was confirmed in dielectric studies. Optical observation revealed the domain structure appearance characteristic for that of the phase transition between tetragonal and orthorhombic phases. This phase transition shows a lowering of symmetry as in the case of bromide analogs. Additionally, the optical studies showed the appearance of a number of cracks in the sample and in some cases, the samples became milky after cooling from the high temperature to the room temperature phase.
Nanoscale Etching of GaAs and InP in Acidic H<sub>2</sub>O<sub>2</sub> Solution: A Striking Contrast in Kinetics and Surface …
2018
In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strikingly different. GaAs etches much faster, while the dependence of the etch rate on the H+ concentration differs markedly for the two semiconductors. Surface analysis techniques provided information on the surface composition after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin stoichiometric oxide that forms a blocking layer on InP. Reaction schemes are provided that allow one to understand the results, in particular…
Microfabricated high temperature sensing platform dedicated to scanning thermal microscopy (SThM)
2018
Abstract The monitoring of heat flux is becoming more and more critical for many materials and structures approaching nanometric dimensions. Scanning Thermal Microscopy (SThM) is one of the tools available for thermal measurement at the nanoscale and requires calibration. Here we report on a micro-hotplate device made of a platinum heater suspended on thin silicon nitride (SiN) membranes integrating specific features for SThM calibration. These heated reference samples can include a localized resistive temperature sensors (RTD) or standalone platinum membranes (typically 10 × 10 μm2) on which the temperature can be measured precisely. This functional area is dedicated to (1) estimate the th…
Diagrammatic Expansion for Positive Spectral Functions in the Steady-State Limit
2019
Recently, a method was presented for constructing self-energies within many-body perturbation theory that are guaranteed to produce a positive spectral function for equilibrium systems, by representing the self-energy as a product of half-diagrams on the forward and backward branches of the Keldysh contour. We derive an alternative half-diagram representation that is based on products of retarded diagrams. Our approach extends the method to systems out of equilibrium. When a steady-state limit exists, we show that our approach yields a positive definite spectral function in the frequency domain.
Calculation of electronic g-tensors using coupled cluster theory.
2009
A scheme for the calculation of the electronic g-tensor at the coupled cluster (CC) level is presented. The reported implementation employs an effective one-electron spin-orbit operator, allows the inclusion of arbitrary excitations in the cluster operator, and offers various options concerning the treatment of orbital relaxation and choice of reference determinants. In addition, the use of gauge-including atomic orbitals (GIAOs) is possible to overcome the gauge origin problem. Benchmark calculations for the NH ((3)Sigma(-)) radical reveal the importance of electron correlation effects for the accurate prediction of the g-shift as well as the slow basis set convergence of such calculations…