Search results for "Band structure"
showing 10 items of 215 documents
Polarized and resonant Raman spectroscopy on single InAs nanowires
2011
We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculatio…
Electronic structure of poly(p-(disilanylene)phenylene)
1996
Abstract We present the geometrical and electronic structures of several isomers of poly(p-(disilanylene)phenylene), The structural analysis, performed at the 3-21G* level, shows that the isomers with the phenylene group perpendicular to the silicon backbone are the more stable conformations, displaying almost the same energy. The electronic properties, as obtained from the valence-effective Hamiltonian (VEH) band structure calculations, strongly depend on the disposition of the phenylene group into the polymeric backbone. The VEH predicts a wide and asymmetric absorption band in excellent agreement with UV experimental data.
VEH electronic band structure of poly(phenylsilane)
1993
Abstract The electronic structure of all-trans syndiotactic and isotactic poly(phenylsilane) has been calculated using the valence effective Hamiltonian (VEH) method. The effects of attachment of the phenyl group on the electronic properties of polysilane are analysed in detail. The VEH results show a decrease of ionization potential and an increase of electron affinity which determine an important reduction of the bandgap. These features are correlated with σ−π and σ ∗ −π ∗ interactions between the silicon backbone and the phenyl group.
Role ofp-dands-dinteractions in the electronic structure and band gap of Zn1−xMxO (M=Cr, Mn, Fe, Co, Ni, and Cu): Photoelectron and optical spectrosc…
2012
We report an investigation on the effect of $p$-$d$ and $s$-$d$ interactions in the electronic structure, and especially in the band-gap value, of wurtzite wide-gap diluted magnetic semiconductors Zn${}_{1\ensuremath{-}x}$${M}_{x}$O ($M=\mathrm{Cr}$, Mn, Fe, Co, Ni, Cu). Thin films prepared by pulsed laser deposition are investigated by means of optical absorption at low-temperature and photoelectron spectroscopy. Pure wurzite phase is shown to be maintained for Co and Mn concentrations up to 25$%$ and for Cr up to 10$%$, while in the case of Fe, Ni, and Cu, other phases are present for concentrations higher than 5, 2, and 1$%$, respectively. The band gap of the Zn${}_{1\ensuremath{-}x}$${M…
Ab initio study of the mechanical and electronic properties of scheelite-type XWO4(X = Ca, Sr, Ba) compounds
2017
The structural, mechanical, and electronic properties of scheelite-type CaWO4, SrWO4, and BaWO4 have been investigated using density-functional theory (DFT) within the generalized-gradient approximation (GGA). In particular, we have studied the effect of pressure in the crystal structure, elastic constants [Formula: see text], elastic moduli ([Formula: see text], [Formula: see text] and [Formula: see text]), and elastic anisotropy. We have also investigated the band structure of the three studied compounds and the effect of pressure in their electronic bandgap. The obtained results compare well with experimental results regarding the high-pressure (HP) behavior of the crystal structure. Th…
Substitution Effects in Double Perovskites: How the Crystal Structure Influences the Electronic Properties
2013
We systematically studied substituted Sr2FeReO6 with respect to experimental characterization and theoretical band structure calculations. In the framework of the tight-binding approach, hole- or electron-doping of Sr2MM’O6 were performed at the M or M’ positions either by transition or main group metals. Hole-doping, rather than electron-doping, has a favorable effect to improve the half-metallicity (Curie temperature and saturation magnetization) of the parent compound. When M is substituted by another metal, the original M’ metal will serve as a redox buffer (and vice versa). Substituting M by another metal with a size similar to that of the metal at M’ position causes disorder, which ha…
ChemInform Abstract: Ta4BTe8: Tantalum Telluride Cluster Chains with Encapsulated Boron Atoms.
2010
The new metallic chain compound Ta4BTe8 has been synthesized by high-temperature reactions from the elements. The structure consists of chains of fused B-centered Ta6Te12 clusters (shown in the picture), the individual chains being connected by ditelluride groups. The results of band structure calculations indicate that the interstitial B atoms are required for cluster stability.
ChemInform Abstract: Hf27Si6P10, a Novel Metal-Rich Compound with P2 Groups.
2010
The new ternary metal rich compound Hf27Si6P10 has been synthesized by reduction of HfP with Hf and Si; Hf27Si6P10 crystallizes in a new structure type, a characteristic and unexpected feature of which is the presence of P2 groups; the structural results are interpreted with the aid of high-level band structure calculations.
Engineering thermal conductance using a two-dimensional phononic crystal
2014
Controlling thermal transport has become relevant in recent years. Traditionally, this control has been achieved by tuning the scattering of phonons by including various types of scattering centres in the material (nanoparticles, impurities, etc). Here we take another approach and demonstrate that one can also use coherent band structure effects to control phonon thermal conductance, with the help of periodically nanostructured phononic crystals. We perform the experiments at low temperatures below 1 K, which not only leads to negligible bulk phonon scattering, but also increases the wavelength of the dominant thermal phonons by more than two orders of magnitude compared to room temperature…
Morphology and Band Structure of Orthorhombic PbS Nanoplatelets: An Indirect Band Gap Material
2021
PbS quantum dots and nanoplatelets (NPLs) are of enormous interest in the development of optoelectronic devices. However, some important aspects of their nature remain unclear. Recent studies have revealed that colloidal PbS NPLs may depart from the rock-salt crystal structure of bulk and form an orthorhombic (Pnma) modification instead. To gain insight into the implications of such a change over the optoelectronic properties, we have synthesized orthorhombic PbS NPLs and determined the lattice parameters by means of selected area electron diffraction measurements. We have then calculated the associated band structure using density functional theory with Perdew–Burke–Ernzerhof functional fo…