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RESEARCH PRODUCT
Polarized and resonant Raman spectroscopy on single InAs nanowires
T. ChiaramonteJ. R. MadureiraM. M. De LimaLuis C. O. DacalMônica A. CottaM. MöllerAndrés CantareroFernando Iikawasubject
Materials scienceScatteringCondensed Matter::OtherNanotecnologiaNanowireCiència dels materialsCondensed Matter PhysicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectMolecular physicsElectronic Optical and Magnetic MaterialsEspectroscòpia Ramansymbols.namesakeCondensed Matter::Materials ScienceX-ray Raman scatteringNuclear magnetic resonancesymbolsCoherent anti-Stokes Raman spectroscopyRaman spectroscopyElectronic band structureRaman scatteringWurtzite crystal structuredescription
We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.
year | journal | country | edition | language |
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2011-08-26 |