0000000000177934
AUTHOR
M. M. De Lima
Acousto-electric single-photon detector
We propose a novel concept for a semiconductor-based single-photon detector for quantum information processing, which is capable of discriminating the number of photons in a light pulse. The detector exploits the charge transport by a surface acoustic wave (SAW) in order to combine a large photon absorption area (thus providing high photon collection efficiency) with a microscopic charge detection area, where the photo generated charge is detected with resolution at the single electron level using single electron transistors (SETs). We present preliminary results on acoustic transport measured in a prototype for the detector as well as on the fabrication of radio-frequency single-electron t…
Optical properties of nitride nanostructures
In this paper we review some recent results on the optical properties of nitride nanostructures, in particular on GaN quantum dots (QDs) and InN nanocolumns (NCs). First, we will give a brief introduction on the particularities of vibrational modes of wurtzite. The GaN QDs, embedded in AlN, were grown by molecular beam epitaxy (MBE) in the Stransky-Krastanov mode on c- and a-plane 6H-SiC. We have studied the optical properties by means of photoluminescence (PL) and performed Raman scattering measurements to analyze the strain relaxation in the dots and the barrier, the effect of the internal electric fields, and the influence of specific growth parameters, like the influence of capping or t…
Surface Acoustic Bloch Oscillations, the Wannier-Stark Ladder, and Landau-Zener Tunneling in a Solid
We present the experimental observation of Bloch oscillations, the Wannier-Stark ladder, and Landau-Zener tunneling of surface acoustic waves in perturbed grating structures on a solid substrate. A model providing a quantitative description of our experimental observations, including multiple Landau-Zener transitions of the anticrossed surface acoustic Wannier-Stark states, is developed. The use of a planar geometry for the realization of the Bloch oscillations and Landau-Zener tunneling allows a direct access to the elastic field distribution. The vertical surface displacement has been measured by interferometry.
Defect induced room temperature ferromagnetism in high quality Co-doped ZnO bulk samples
The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their concentration. The magnetometry revealed the coexistence of a paramagnetic and a ferromagnetic phase …
Defect spectroscopy of single ZnO microwires
The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 1018 cm3 . This combination of tech…
Compact Mach-Zehnder acousto-optic modulator
The authors demonstrate a compact optical waveguide modulator based on a Mach-Zehnder interferometer driven by surface acoustic waves. The modulator was monolithically fabricated on GaAs with an active region length of approximately 15μm. It yields peak-to-peak modulation exceeding 90% of the average transmission and operation in the gigahertz frequency range.
Active photonic crystals based on surface acoustic waves
An active photonic crystal (PC) based on the modulation of a one-dimensional cavity resonator by electrically-generated surface acoustic waves is described. The high nonthermal population of surface modes combined with the enhanced Brillouin scattering in the cavity increases the intensity of the scattered light to values comparable to the excitation intensity. This process is employed to switch and modulate light beams in PCs.
Acoustically driven arrayed waveguide grating.
We demonstrate compact tunable phased-array wavelength-division multiplexers driven by surface acoustic waves (SAWs) in the low GHz range. The devices comprise two couplers, which respectively split and combine the optical signal, linked by an array of single-mode waveguides (WGs). Two different layouts are presented, in which multi-mode interference couplers or free propagating regions were separately employed as couplers. The multiplexers operate on five equally distributed wavelength channels, with a spectral separation of 2 nm. A standing SAW modulates the refractive index of the arrayed WGs. Each wavelength component periodically switches paths between the output channel previously asi…
Acousto-optical multiple interference devices
We present a new concept for waveguide acousto-optical devices based on coupled MachZehnder interferometers driven by acoustic waves. These acousto-optical multiple interference devices use the periodic refractive index modulation induced by the acoustic wave to realize functionalities such as ON/OFF switching for an arbitrary time interval, as well as for efficient light modulation at high harmonics of the acoustic frequency and pulse shaping for, e.g., integrated Q-switches. We also discuss application of the concepts to light modulation by very high acoustic frequencies, where the acoustic wavelengths become much shorter than the optical ones.
Synchronized photonic modulators driven by surface acoustic waves
Photonic modulators are one of the most important elements of integrated photonics. We have designed, fabricated, and characterized a tunable photonic modulator consisting of two 180 degrees-dephased output waveguide channels, driven by a surface acoustic wave in the GHz frequency range built on (Al,Ga)As. Odd multiples of the fundamental driven frequency are enabled by adjusting the applied acoustic power. A good agreement between theory and experimental results is achieved. The device can be used as a building block for more complex integrated functionalities and can be implemented in several material platforms. (C) 2013 Optical Society of America
Carrier Transport in GaAs Nanowires Using Surface Acoustic Waves
ABSTRACTThe oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires (NWs) transferred to a SAW beam line on a LiNbO3 crystal. We show that carriers generated in the NW by a focused light spot can be acoustically transported to a second location, where they recombine emitting short light pulses. The results presented here demonstrate the high-frequency manipulation of carriers in NWs without the use of electrical contacts, which opens new perspectives for applications in opto-electronic devices operating at GHz frequencies.
Acoustic manipulation of electron-hole pairs in GaAs at room temperature
We demonstrate the optically detected long-range (>100 μm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAW beams, which can be used as a basic control gate for information processing based on ambipolar transport.
Tunable coupled surface acoustic cavities
We demonstrate the electric tuning of the acoustic field in acoustic microcavities (MCs) defined by a periodic arrangement of metal stripes within a surface acoustic delay line on LiNbO3 substrate. Interferometric measurements show the enhancement of the acoustic field distribution within a single MC, the presence of a “bonding” and “anti-bonding” modes for two strongly coupled MCs, as well as the positive dispersion of the “mini-bands” formed by five coupled MCs. The frequency and amplitude of the resonances can be controlled by the potential applied to the metal stripes.
Phonon-induced polariton superlattices
We show that the coherent interaction between microcavity polaritons and externally stimulated acoustic phonons forms a tunable polariton superlattice with a folded energy dispersion determined by the phonon population and wavelength. Under high phonon concentration, the strong confinement of the optical and excitonic polariton components in the phonon potential creates weakly coupled polariton wires with a virtually flat energy dispersion.
Acousto-optical multiple interference switches
The authors introduce an alternative approach for acousto-optical light control based on the interference of light propagating through several waveguides, each subjected to a periodic refractive index modulation induced by a surface acoustic wave. The feasibility of the concept is demonstrated by the realization of an optical switch for arbitrary time intervals with an on/off contrast ratio of 20.
Phonon-induced optical superlattice
We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.
F-centre luminescence in nanocrystalline CeO2
Nanocrystalline CeO2 powders were synthesized by two cost-effective methods: the self-propagating room temperature (SPRT) method and the precipitation method. Differently prepared samples exhibited different temperature-dependent photoluminescence (PL) in the ultraviolet and visible regions. The PL signals originated from different kinds of oxygen-deficient defect centres with or without trapped electrons (F0, F+ or F++ centres). The temperature-dependent PL spectra were measured using different excitation lines, below (457, 488 and 514?nm) or comparable (325?nm) to the ceria optical band gap energy, in order to investigate the positions of intragap localized defect states. Evidence for the…
ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon
Paramagnetic centers in hydrogenated microcrystalline silicon, mc-Si:H have been studied using dark and light-induced electron-spin resonance ~ESR!. In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are gi52.0096 and g’52.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (gi51.999, g’51.996), while the other is characterized by large, unresolved broadening such that unique g values cannot b…
Acoustic phonons for coherent photon control in semiconductor structures
We present a novel concept for acousto-optical modulation in waveguide (WG) structures using coherent phonons in the form of surface acoustic waves (SAWs). Here, a SAW impinging perpendicular to a waveguide structure induces a change in phase of the light propagating through it, which is translated into a transmission intensity modulation by using the WG as an arm of a Mach-Zehnder interferometer (MZI). We show that the modulation becomes strongly enhanced if the SAW induces phase changes of opposite sign in the MZI arms. Very compact modulators with an interaction length between the optical and acoustic waves of approx. 15 µm have been fabricated using focusing acoustic transducers to gene…
Valence-band splitting energies in wurtzite InP nanowires : Photoluminescence spectroscopy and ab initio calculations
We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, r…
Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)
We found out that the polar pattern for the zinc-blende InAs LO mode displayed in Fig. 2(b) of our original paper represents the backscattering Raman intensities from a (11¯2) top surface and not as stated in the original manuscript from a (110) top surface.In the latter the LO mode is forbidden for all configurations.
Dynamics of the incorporation of Co into the wurtzite ZnO matrix and its magnetic properties
Made available in DSpace on 2022-04-29T07:25:55Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-07-25 Financiadora de Estudos e Projetos Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Abstract Bulk Co-doped ZnO (Zn1-xCoxO) samples were prepared and studied with particular emphasis on their compositions, structures, and magnetic properties. A detailed microstructural analysis was conducted to investigate the nature of Co incorporation into the wurtzite ZnO matrix. The Zn1-xCoxO ceramic samples were prepared using the standard solid-state reaction method with different Co molar concentrations of u…
Coefficient of thermal expansion and elastic modulus of thin films
The coefficient of thermal expansion (CTE), biaxial modulus, and stress of some amorphous semiconductors (a-Si:H, a-C:H, a-Ge:H, and a-GeCx:H) and metallic (Ag and Al) thin films were studied. The thermal expansion and the biaxial modulus were measured by the thermally induced bending technique. The stress of the metallic films, deposited by thermal evaporation (Ag and Al), is tensile, while that of the amorphous films deposited by sputtering (a-Si:H, a-Ge:H, and a-GeCx:H) and by glow discharge (a-C:H) is compressive. We observed that the coefficient of thermal expansion of the tetrahedral amorphous thin films prepared in this work, as well as that of the films reported in literature, depen…
Spatial carrier distribution in InP/GaAs type II quantum dots and quantum posts
We performed a detailed investigation of the structural and optical properties of multi-layers of InP/GaAs quantum dots, which present a type II interface arrangement. Transmission electronic microscopy analysis has revealed relatively large dots that coalesce forming so-called quantum posts when the GaAs layer between the InP layers is thin. We observed that the structural properties and morphology affect the resulting radiative lifetime of the carriers in our systems. The carrier lifetimes are relatively long, as expected for type II systems, as compared to those observed for single layer InP/GaAs quantum dots. The interface intermixing effect has been pointed out as a limiting factor for…
Optical emission of InAs nanowires
Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to…
Compact acousto-optic multimode interference device in (Al,Ga)As.
Multimode interference (MMI) devices are key components in modern integrated photonic circuits. Here, we present acoustically tuned optical switches on an (Al,Ga)As platform that enable robust, compact and fast response systems improving on recently demonstrated technology. The device consists of a 2 × 2 MMI device fine-tuned in its center region by a focused surface acoustic wave (SAW) beam working in the low GHz range. In this way, we can tune the refractive index profile over a narrow modulation region and thus control the optical switching behaviour via the applied SAW intensity. Direct tuning of the MMI device avoids losses and phase errors inherent to arrayed waveguide based switches,…
Acoustic spectral hole-burning in a two-level system ensemble
AbstractMicroscopic two-level system (TLS) defects at dielectric surfaces and interfaces are among the dominant sources of loss in superconducting quantum circuits, and their properties have been extensively probed using superconducting resonators and qubits. We report on spectroscopy of TLSs coupling to the strain field in a surface acoustic wave (SAW) resonator. The narrow free spectral range of the resonator allows for two-tone spectroscopy where a strong pump is applied at one resonance, while a weak signal is used to probe a different mode. We map the spectral hole burnt by the pump tone as a function of frequency and extract parameters of the TLS ensemble. Our results suggest that det…
Reconfigurable photonic routers based on multimode interference couplers
We present a design approach for compact reconfigurable light routers with N access waveguides (WGs) based on multimode interference (MMI) couplers. The proposed devices comprise two MMI couplers, which are employed as power splitters and combiners, respectively, linked by an array of N single-mode WGs. When the effective refractive index of the WGs is modulated with the proper relative optical phase difference, the light can switch paths between the preset output channel and the remaining output WGs. Taking advantage of the transfer phases between the access ports of the MMI couplers, we derive very simple phase relations between the modulated WGs that enable the reconfiguration of the out…
Polarized and resonant Raman spectroscopy on single InAs nanowires
We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculatio…
Acoustically tunable photonic structures based on microcavity polaritons
Abstract The interaction between surface acoustic waves (SAWs) with (Al,Ga)As microcavity polaritons results in the formation of a dynamic optical superlattice with folded light dispersion and energy stop bands when the lower polariton branch is predominantly of photonic character. For small detunings between the excitonic and optical cavity resonances, the SAW bleaches the polariton resonances through the efficient dissociation of the excitons by its piezoelectric field.
Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures.
InAs nanowires grown by vapor–liquid–solid (VLS) method are investigated by photoluminescence. We observe that the Fermi energy of all samples is reduced by ~20 meV when the size of the Au nanoparticle used for catalysis is increased from 5 to 20 nm. Additional capping with a thin InP shell enhances the optical emission and does not affect the Fermi energy. The unexpected behavior of the Fermi energy is attributed to the differences in the residual donor (likely carbon) incorporation in the axial (low) and lateral (high incorporation) growth in the VLS and vapor–solid (VS) methods, respectively. The different impurity incorporation rate in these two regions leads to a core/shell InAs homost…
Acoustically driven photon antibunching in nanowires.
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless …
Optical phonon modes of wurtzite InP
Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.
Focusing of surface-acoustic-wave fields on (100) GaAs surfaces
Focused surface-acoustic waves (SAWs) provide a way to reach intense acoustic fields for electro- and optoacoustic applications on semiconductors. We have investigated the focusing of SAWs by interdigital transducers (IDTs) deposited on (100)-oriented GaAs substrates. The focusing IDTs have curved fingers designed to account for the acoustic anisotropy of the substrate. Different factors that affect focusing, such as the aperture angle and the configuration of the IDT fingers, were systematically addressed. We show that the focusing performance can be considerably improved by appropriate choice of the IDT metal pads, which, under appropriate conditions, create an acoustic waveguide within t…