6533b86efe1ef96bd12cca6e
RESEARCH PRODUCT
Acoustically driven photon antibunching in nanowires.
Carsten PfüllerAlberto Hernández-mínguezOliver BrandtSteffen BreuerS. LazićHenning RiechertM. M. De LimaLutz GeelhaarPaulo V. SantosM. MöllerAndrés CantareroAlberto García-cristóbalClaudio Somaschinisubject
PhotoluminescencePhotonMaterials scienceMacromolecular SubstancesSurface PropertiesExcitonPhase (waves)NanowireMolecular ConformationBioengineeringGalliumArsenicalslaw.inventionCondensed Matter::Materials ScienceSonicationOpticslawMaterials TestingGeneral Materials ScienceParticle SizePhotonsPhoton antibunchingbusiness.industryMechanical EngineeringSurface acoustic waveGeneral ChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsLaserNanostructuresOptoelectronicsbusinessCrystallizationdescription
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless manipulation of carriers by SAWs opens new perspectives for applications of NWs in opto-electronic devices operating at gigahertz frequencies. The potential of this approach is demonstrated by the realization of a high-frequency source of antibunched photons based on the acoustic transport of electrons and holes in (In,Ga)As NWs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-12-13 | Nano letters |