0000000000411672

AUTHOR

M. Möller

Molecular dynamics of discotic charge-transfer complexes, dielectric spectroscopy and2H NMR studie

Abstract Using a combination of solid state 2H NMR spectroscopy on selectively deuteriated samples and dielectric spectroscopy, the molecular dynamics of discotic charge-transfer (CT) complexes were investigated. These complexes show particular thermodynamic and flow properties. Considered were mixtures of low molar mass donors and acceptors, low molar mass donors with main chain acceptor polymers and covalently linked donor-acceptor twins with different lengths of the spacer. A main result is that correlated rotational motions of discotic molecules or groups about the columnar axis are observed in all systems except for the twin with the short spacer. This type of motion seems to be a gene…

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Carrier Transport in GaAs Nanowires Using Surface Acoustic Waves

ABSTRACTThe oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires (NWs) transferred to a SAW beam line on a LiNbO3 crystal. We show that carriers generated in the NW by a focused light spot can be acoustically transported to a second location, where they recombine emitting short light pulses. The results presented here demonstrate the high-frequency manipulation of carriers in NWs without the use of electrical contacts, which opens new perspectives for applications in opto-electronic devices operating at GHz frequencies.

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Wormlike Polystyrene Brushes in Thin Films

Mono- and multilayer films were prepared on mica by solution casting of a high molecular weight polymacromonomer, i.e., a polymethacrylate of about 1000 repeating units each of which was substituted by a polystyrene chain with a molecular weight of about 5000 Da. The films were studied by tapping scanning force microscopy. The material showed a remarkable preference for forming well-defined monolayers of a thickness of 6.5 ± 0.2 nm consistent with the hard core diameter of the collapsed cylindrical brush molecules. When the films were probed with high normal force, the single molecules were observed to organize in a dense nematic-like packing as expected for inherently stiff molecules. In o…

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Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)

We found out that the polar pattern for the zinc-blende InAs LO mode displayed in Fig. 2(b) of our original paper represents the backscattering Raman intensities from a (11¯2) top surface and not as stated in the original manuscript from a (110) top surface.In the latter the LO mode is forbidden for all configurations.

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Optical emission of InAs nanowires

Wurtzite InAs nanowire samples grown by chemical beam epitaxy have been analyzed by photoluminescence spectroscopy. The nanowires exhibit two main optical emission bands at low temperatures. They are attributed to the recombination of carriers in quantum well structures, formed by zincblende-wurtzite alternating layers, and to the donor-acceptor pair. The blue-shift observed in the former emission band when the excitation power is increased is in good agreement with the type-II band alignment between the wurtzite and zincblende sections predicted by previous theoretical works. When increasing the temperature and the excitation power successively, an additional band attributed to the band-to…

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Polarized and resonant Raman spectroscopy on single InAs nanowires

We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculatio…

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Acoustically driven photon antibunching in nanowires.

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless …

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