Search results for "Biasing"
showing 10 items of 69 documents
Tunneling spectroscopy of persistent currents in superconducting microrings
2007
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in the ring. The effect manifests itself as periodic oscillations of the tunnel current through the junction at a fixed bias voltage as function of perpendicular magnetic field. The magnitude of oscillations depends on bias point. It reaches maximum at energy eV which is close to the superconducting gap and decreases with increase of temperature. The period of oscillations dF in units of magnetic flux is equal neither to h/e nor to h/2e, but significantly exc…
Microrefrigeration by NIS tunnel junctions
1996
By using a normal metal-insulator-superconductor (NIS) tunnel junction one can manipulate the Fermi-Dirac distribution of the electrons in the normal electrode. If the junction is biased close to the superconducting gap, Δ, only “hot electrons” above Fermi level can tunnel from the normal electrode to the superconductor. Thus, due to the decoupling of the conduction electrons from the lattice at low temperatures, there exists a possibility to decrease the electronic temperature by this method. Because of the symmetry with bias voltage, two NIS tunnel junctions in series can form an efficient microrefrigerator. Temperature can be measured with two additional junctions by considering the vari…
Microrefrigeration by normal-metal/ insulator/superconductor tunnel junctions
1997
Abstract A normal-metal/insulator/superconductor (NIS) tunnel junction can be applied to cool electrons by biasing the junction suitably with external voltage. Because of the symmetry with bias voltage, two NIS junctions in series can form an efficient microrefrigerator. So far our SINIS microrefrigerator has been capable of reaching electronic temperatures of about 100 mK starting from 300 mK. To achieve appreciable refrigeration of the underlying lattice, microrefrigerator must be thermally decoupled from the bulk substrate. We have demonstrated experimentally the reduction of lattice temperature of a few mK at 200 mK by extending the normal electrode on a thin dielectric membrane. Method…
NIS chip refrigeration
1999
A normal-metal/insulator/superconductor (NIS) tunnel junction can be applied to cool electrons by biasing the junction suitably with external voltage. Two NIS junctions in series can form an efficient microrefrigerator because of the symmetry with bias voltage. Our SINIS microrefrigerator has been capable of reaching electronic temperatures of about 100 mK starting from 300 mK. To achieve appreciable refrigeration of the underlying lattice, the microrefrigerator must be thermally decoupled from the bulk substrate. We have demonstrated experimentally the reduction of lattice temperature by 23 mK at 180 mK by extending the normal electrode on a thin dielectric membrane with four suspended bri…
Interference of nonequilibrium quasiparticles in a superconductor
2003
Abstract We have observed an interference of nonequilibrium quasiparticles, injected from a copper electrode into an aluminium loop through a tunnel barrier. At temperatures below 1K the tunnel current at fixed voltage bias is periodically modulated by external magnetic field. The amplitude of the modulation reaches maximum at a bias slightly below the gap energy, and decreases with the further increase of the bias voltage. For a given voltage bias the amplitude of the current oscillations decreases with increase of the temperature and the loop circumference.
Resonant Tunneling through a Macroscopic Charge State in a Superconducting Single Electron Transistor
1997
We predict theoretically and observe in experiment that the differential conductance of a superconducting single electron transistor exhibits a peak which is a complete analog, in a macroscopic system, of a standard resonant tunneling peak associated with tunneling through a single quantum state. In particular, in a symmetric transistor, the peak height is universal and equal to ${e}^{2}/2\ensuremath{\pi}\ensuremath{\Elzxh}$. Away from the resonance we clearly observe the cotunneling current which, in contrast to the normal-metal transistor, varies linearly with the bias voltage.
Lifetime of the superconductive state in short and long Josephson junctions
2008
We study the transient statistical properties of short and long Josephson junctions under the influence of thermal and correlated fluctuations. In particular, we investigate the lifetime of the superconductive metastable state finding the presence of noise induced phenomena. For short Josephson junctions we investigate the lifetime as a function both of the frequency of the current driving signal and the noise intensity and we find how these noise-induced effects are modified by the presence of a correlated noise source. For long Josephson junctions we integrate numerically the sine-Gordon equation calculating the lifetime as a function of the length of the junction both for inhomogeneous a…
Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays
2010
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a self-consistent review of sequential transport processes in such devices, based on the so-called “orthodox” model. We calculate numerically the current-voltage (I–V) curves, the conductance versus bias voltage (G–V) curves, and the associated thermal transport in symmetric and asymmetric two-junction arrays such as Coulomb-blockade thermometers (CBTs), superconducting-insulator-normal-insulator-superconducting (SINIS) structures, and superconducting single-ele…
Direct measurements of electron thermalization in Coulomb blockade nanothermometers at millikelvin temperatures
1998
Abstract We investigate electron thermalization of tunnel junction arrays installed in a powerful dilution refrigerator whose mixing chamber can produce lattice temperatures down to 3 mK. The on-chip Coulomb blockade thermometers (CBT) against other thermometers at the mixing chamber provide direct information on the thermal equilibrium between the electronic system and the refrigerator. We can detect and discriminate between the heat load delivered through the wiring and that produced by the bias current of the CBT-measurement. The basic heat leak limits the minimum of the electronic temperature to slightly below 20 mK.
Power monitoring in dielectric-loaded plasmonic waveguides with internal Wheatstone bridges
2013
We report on monitoring the mode power in dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) by measuring the resistance of gold electrodes, supporting the DLSPPW mode propagation, with internal (on-chip) Wheatstone bridges. The investigated DLSPPW configuration consisted of 1-μm-thick and 10-μm-wide cycloaliphatic acrylate polymer ridges tapered laterally to a 1-μm-wide ridge placed on a 50-nm-thin and 4-um wide gold stripe, all supported by a ~1.7-µm-thick Cytop layer deposited on a Si wafer. The fabricated DLSPPW power monitors were characterized at telecom wavelengths, showing very high responsivities reaching up to ~6.4 μV/μW (for a bias voltage of 245 mV) and the operati…