Search results for "Blues"

Cover Feature: Alkali Blues: Blue‐Emissive Alkali Metal Pyrrolates (Chem. Eur. J. 26/2019)

2019

Nucleotide sequence of plasmid p4028, a cryptic plasmid from Leuconostoc oenos.

1996

Abstract TheLeuconostoc oenosplasmid p4028 was cloned in pBlueScript (SK+), and its complete nucleotide sequence was determined. The analysis of the nucleotide sequence revealed five open reading frames, all of them located on the same strand and grouped in two clusters separated by a short noncoding stretch. A similarity search against the other sequences deposited in the EMBL and GenBank databases showed that p4028 has no significant similarity with any of the sequences checked. Nevertheless, a putative ATP-binding motif was found in ORF2. A more detailed analysis of this ORF suggests that it could encode for a DNA-dependent ATPase.

EINSTEIN–PLANCK FORMULA, EQUIVALENCE PRINCIPLE, AND BLACK HOLE RADIANCE

2005

The presence of gravity implies corrections to the Einstein-Planck formula $E=h \nu$. This gives hope that the divergent blueshift in frequency, associated to the presence of a black hole horizon, could be smoothed out for the energy. Using simple arguments based on Einstein's equivalence principle we show that this is only possible if a black hole emits, in first approximation, not just a single particle, but thermal radiation.

Strain effects and phonon-plasmon coupled modes in Si-doped AlN

2009

The E 2h and A 1 (LO) phonon modes of AlN films grown on sapphire are analyzed by Raman scattering as a function of silicon doping for concentrations covering from 5.5 x 10 19 cm ―3 to 5.2 x 10 21 cm ―3 . For high doping levels the appearance of a mode around 520 cm ―1 indicates the precipitation of crystalline silicon in the samples and its inhomogeneous incorporation to the AlN layer. The frequency of this mode shifts to lower energies with doping, indicating that the silicon crystals are embedded in the AlN lattice and under tensile strain. On the other hand, the AlN phonon modes are blue-shifted due to the compressive strain as a result of the silicon incorporation. This strain is parti…

Si nanocrystals embedded in $SiO_2$: Optical studies in the vacuum ultraviolet range

2011

Photoluminescence excitation and transmission spectra of Si nanocrystals of different diameters embeddedin a SiO2 matrix have been investigated in the broad visible-vacuum ultraviolet spectral range usingsynchrotron radiation. The dependence of the photoluminescence excitation spectra on the nanocrystals sizewas experimentally established. It is shown that the photoluminescence excitation and absorption spectra aresignificantly blueshifted with decreasing Si nanocrystal size. A detailed comparison of photoluminescenceexcitation and absorption spectra with data from theoretical modeling has been done. It is demonstrated thatthe experimentally determined blueshift of the photoluminescence exc…

Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection

2015

This work presents a comprehensive optical characterization of Zn1−xMgxO thin films grown by spray pyrolysis (SP). Absorption measurements show the high potential of this technique to tune the bandgap from 3.30 to 4.11 eV by changing the Mg acetate content in the precursor solution, leading to a change of the Mg-content ranging from 0 up to 35%, as measured by transmission electron microscopy-energy dispersive x-ray spectroscopy. The optical emission of the films obtained by cathodoluminescence and photoluminescence spectroscopy shows a blue shift of the peak position from 3.26 to 3.89 eV with increasing Mg incorporation, with a clear excitonic contribution even at high Mg contents. The lin…

Depth profiling of optical and vibrational properties in GaN/AlN quantum dot superlattices

2009

Spatially resolved confocal μ-Raman and μ-photoluminescence experiments were performed to analyze the vibrational and optical properties of GaN/AlN quantum dots as a function of depth. Two approaches have been followed. First, spectra were taken by defocusing the microscope objective at various depths on the sample surface. In a second set of experiments a bevel at an angle of 20° with respect to the surface normal was prepared by mechanical polishing of the surface, and spectra were taken across the bevel. The E2h vibrational modes ascribed to the GaN QDs and the AlN spacer redshift towards the surface, indicating the progressive relaxation of the QDs and a considerable increase of the ten…

Luminescence properties of wurtzite AlN nanotips

2006

The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4eV and an excitonic feature at 6.2eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2eV) of the ∼3.2eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145°C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs.

Temperature Sensor Based on Colloidal Quantum Dots PMMA Nanocomposite Waveguides

2012

In this paper, integrated temperature sensors based on active nanocomposite planar waveguides are presented. The nanocomposites consist of cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) matrix. When the samples are heated in a temperature range from 25$^{circ}{rm C}$ to 50 $^{circ}{rm C}$, the waveguided photoluminescence of QDs suffers from a strong intensity decrease, which is approximately quadratic dependent on temperature. Moreover, the wavelength peak of the waveguided emission spectrum of CdTe-PMMA shows a blue shift of 0.25 ${rm nm}/^{circ}{rm C}$, whereas it remains constant in the case of CdSe-PMMA. A temperature…

Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness

2007

We have investigated the influence of spacer thickness on the vibrational and strain characteristics of GaN/AlN quantum dot multilayers (QD). The Raman shift corresponding to the E2h vibrational mode related to the QDs has been analyzed for AlN thicknesses ranging from 4.4 nm to 13 nm, while the amount of GaN deposited in each layer remained constant from sample to sample. It is shown that there is a rapid blue shift of the GaN vibrational mode with spacer thickness when its value is smaller than 7 nm while it remains almost constant for thicker spacers. A rapid increase of the Raman line-width in the thicker samples is also observed. The experimental behavior is discussed in comparison wit…