Search results for "Breakdown voltage"
showing 2 items of 12 documents
Preliminary radiation hardness tests of single photon Si detectors
2010
Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…
A phenomenological approach to the mechanical breakdown of anodic oxide films on zirconium
1986
Abstract A phenomenological theory of the mechanical breakdown of films growing on valve metals during galvanostatic oxidation is presented and discussed in detail for ZrO2 anodic films. It is shown that the mechanical breakdown voltage, Vmb, can be linearly related to the logarithm of the anodizing current density both in the case of constant and variable critical thickness, Lc, at which the breakdown occurs. It is also shown that the Amb and Bmb parameters of the relationship: Vmb = Amb + Bmb log i are strictly related to the kinetic parameters of growth of the films in the different solutions. The expressions of Amb and Bmb parameters are derived for films grown in the presence as well a…