Search results for "CERAMICS"

ASSESSMENT OF THE STRENGTH OF CARBON-CARBON COMPOSITES IN CROSS-BENDING AND SHEARING

2015

Preliminary results on the historical production of majolica tiles in the Madonie area (Northern Central Sicily)

2007

Raman spectroscopy study of β-irradiated silica glass

2003

International audience; Natural and synthetic silica glass samples with different OH content have been submitted to β-irradiation at different doses from 106 to 5 × 109 Gy in a Van de Graaff accelerator. Structural changes under irradiation have been analyzed by Raman spectroscopy. The main findings are: (i) a decrease of the Si–O–Si angular dispersion and the average Si–O–Si angle as a function of dose and (ii) an increase of number of three-membered SiO4 ring concentration during irradiation. These results show therefore that purely electronic excitation from β-irradiation induces in a-SiO2 small but significant structural changes of the SiO4 membered ring statistics (size and dispersion)…

Luminescence of ODC(II) in quartz and cristobalite glasses

2022

Abstract The results of the optical spectroscopy of twofold coordinated silicon centers – ODC(II) in quartz and cristobalite glasses are presented. The luminescence and excitation spectra attributed to different local symmetry of ODC(II) were investigated under synchrotron excitation in the VUV region. The observed differences in the luminescence and excitation spectra of ODC(II) are caused by the environment and, therefore, short-range order in the samples.

Thermostimulated luminescence and electron spin resonance in X-ray- and photon-irradiated oxygen-deficient silica

2007

Abstract Influences of oxygen-deficiency on radiation properties of high-purity, low-OH fused silica were studied. It is found that thermostimulated luminescence (TSL) peaks are different for photo (7.7 eV) and X-ray excitation at 77 K. X-ray excitation produces TSL peaks at 125 and 170 K corresponding to the anneal temperatures of two types of self-trapped holes centers STH2 and STH1, respectively, detected by electron spin resonance (ESR). Oxygen-deficiency apparently increases the number of electron traps, stabilizing a larger number of STHs in the continuous defect-free silica network than is observed in similarly X-irradiated stoichiometric silica glasses. Photoexcitation of oxygen-def…

Investigation of optical and radiation properties of oxygen deficient silica glasses

1999

The deficiency of oxygen in pure silica manifests an absorption band at 5 eV as well as an absorption band of higher intensity at 7.6 eV. The band at 5 eV is associated with lone twofold-coordinated silicon centers. The nature of the main band at 7.6 eV has been studied using silica samples with different levels of oxygen deficiency. The excitation via the 7.6 eV band produces a photoelectric response as well as inner center and recombination type luminescence. Two main luminescence bands of the twofold-coordinated silicon center appear: a blue band (2.7 eV) and a UV band (4.4 eV). Induced absorption with several bands as well as thermally stimulated luminescence with complex peak structure…

Interconversion between non-bridging oxygen hole center and peroxy radical in F2-laser-irradiated SiO2 glass

2004

Formation processes of the peroxy radical (POR) were examined in high-purity SiO 2 glass exposed to F 2 -laser light which creates mobile atomic oxygen (O 0 ) by photolyzing the interstitial oxygen molecules (O 2 ). It was proved that under these conditions POR is formed by a reaction of the non-bridging oxygen hole center (NBOHC, an oxygen dangling bond) with O 0 , not by a reaction between the E' center (a silicon dangling bond) and O 2 . Subsequent exposure to KrF laser light photolyzes POR and recoveres NBOHC by dissociating the O-O bond in POR. These findings corroborate the important role of O° in defect processes in SiO 2 glass.

Fluorine laser-induced silicon hydride SiH groups in silica

2007

Abstract Formation and destruction of silicon hydride (Si–H) groups in silica by F 2 laser irradiation and their vacuum ultraviolet (VUV) optical absorption was examined by infrared (IR) and VUV spectroscopy. Photoinduced creation of Si–H groups in H 2 -impregnated oxygen deficient silica is accompanied by a growth of infrared absorption band at 2250 cm −1 and by a strong increase of VUV transmission at 7.9 eV. Photolysis of Si–H groups by 7.9 eV photons in this glass was not detected when the irradiation was performed at temperature 80 K. However, a slight destruction of Si–H groups under 7.9 eV irradiation was observed at the room temperature. This finding gives a tentative estimate of VU…

Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers

2003

Abstract Cathodoluminescence spectral shapes and respective band decay times show no similarity between luminescence centers in different crystal and amorphous modifications of SiO2 and GeO2. On the other hand, the additionally produced red luminescence centers (650 nm) by oxygen implantation into SiO2 layers are of the same nature as in stoichiometric SiO2 and are attributed to the non-bridging oxygen hole center (NBOHC). On the other hand, the elevated blue luminescence (460 nm) in Si implanted SiO2 belongs to the silicon related oxygen deficient center (SiODC) as in stoichiometric layers also. Ge implantation into SiO2 and thermal post-annealing leads to a huge violet luminescence (400 n…

Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations

2002

Abstract Thermally grown SiO 2 layers of thickness d =500 nm have been implanted by Ge + , Si + , and O + ions of energy 350, 150, and 100 keV, respectively, and a uniform implantation dose of D i =5×10 16 ions/cm 2 . Thus the implantation profiles are expected with a concentration maximum of nearly 4 at.% at the half-depth d m ≅250 nm of the SiO 2 layers. After thermal annealing to 900 °C for 1 h in dry nitrogen or vacuum the typical violet luminescence band ( λ =400 nm) of the Ge + implanted centers is increased more than 200-fold and the Ge luminescent center depth profile is shifted from about 250 to 170 nm towards the surface as determined by cathodoluminescence (CL) depth profiling. I…