Search results for "CHALCOGENIDE"
showing 10 items of 141 documents
Theoretical study of cascade laser in erbium-doped chalcogenide glass fibers
2010
International audience; A theoretical investigation of an innovative cascade laser source is performed. The main goal of the work is the design of a continuous-wave (CW) photonic crystal fiber (PCF) laser, based on an erbium-doped chalcogenide glass. Due to the comparable lifetimes of the 4I13/2, 4I11/2 and 4I9/2 erbium energy levels, the simultaneous emissions at the wavelengths close to 2.7 μm and 4.5 μm are obtained with a pump wavelength close to 806 nm (direct pumping into the level 4I9/2). This scheme could be useful to develop high efficiency, high beam-quality and compact Near-IR and Mid-IR oscillators with single-mode output for applications not only in surgery but also in spectros…
Optical aging behaviour naturally induced on As_2S_3 microstructured optical fibres
2014
The efficiency and the stability of As2S3 microstructured optical fibres (MOFs) are limited by the shift of their optical properties that occurs over time due to a naturally induced aging process. Such sensitivity becomes more crucial for long optical path. Among the variety of fibre designs, the MOFs are developed for promising photonics applications such as supercontinuum generation for example. In the present work, we carried out an extensive aging study on As2S3 chalcogenide MOFs in ambient atmosphere. The evolution of the fibre transmission spectrum has been studied with regards to exposure time. The analysis of the transmission line profile was performed in terms of different spectral…
Fourth-order cascaded Raman shift in AsSe chalcogenide suspended-core fiber pumped at 2 μm
2011
International audience; Cascaded Raman wavelength shifting up to the fourth order ranging from 2092 to 2450nm is demonstrated using a nanosecond pump at 1995nm in a low-loss As38Se62 suspended-core microstructured fiber. These four Stokes shifts are obtained with a low peak power of 11W, and only 3W are required to obtain three shifts. The Raman gain coefficient for the fiber is estimated to (1.6 +-0.5)x 10e−11 m/W at 1995nm. The positions and the amplitudes of the Raman peaks are well reproduced by the numerical simulations of the nonlinear propagation.
High-pressure synthesis of boron-rich chalcogenides B12S and B12Se
2022
The authors thank Drs. I. Dovgaliuk and T. Chauveau for assistance with Rietveld analysis; and Drs. V. Bushlya and A. Jamali for help with EDX/SEM measurements. This work was financially supported by the European Union's Horizon 2020 Research and Innovation Program under Flintstone2020 project (grant agreement No 689279).
Experimental investigation of Brillouin and Raman scattering in a 2SG sulfide glass microstructured chalcogenide fiber.
2008
International audience; In this work, we investigate the Brillouin and Raman scattering properties of a Ge15Sb20S65 chalcogenide glass microstructured single mode fiber around 1.55 microm. Through a fair comparison between a 2-m long chalcogenide fiber and a 7.9-km long classical single mode silica fiber, we have found a Brillouin and Raman gain coefficients 100 and 180 larger than fused silica, respectively.
Investigations of As-S-Se thin films for use as inorganic photoresist for digital image-matrix holography
2011
AbstractAs-S-Se chalcogenide thin films are successfully employed in classical and dot-matrix holography as inorganic photoresists for obtaining a relief-phase hologram. However using these films for image-matrix hologram recording has not been studied due to some features of image-matrix technology. For the applied research of the optical properties of As-S-Se films an experimental device of digital image-matrix holographic recording based on 100 mW 405 nm semi-conductor laser and Spatial Light Modulator (SLM) has been created. The device has the following main parameters: 140 × 105 µm frame size; laser intensity during exposure 10 W/cm2. With the help of this device diffraction grating an…
Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in ther…
2021
This work was supported by the European Regional Development Fund (ERDF) project No 1.1.1.1/16/A/257. J. A. acknowledges the ERDF project No. 1.1.1.2/1/16/037. Institute of Solid State Physics, University of Latvia, Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017 TeamingPhase2 under grant agreement No. 739508, project CAMART2 . The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form a part of an ongoing study.
<title>Holographic recording in amorphous chalcogenide semiconductor thin films</title>
2000
ABSTRACT The photoinduced changes ofoptical properties and holographic recording in amorphous chalcogenide semiconductor As-S- Se and As2S3 thin films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that theself-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light orthermal treatment can be used to increase the diffraction efficiency ofthe holograms.Keywords: chalcogenide semiconductors, amorphous films, photoresists, photoinduced processes, relaxation processes,self-enhancement of h…
Holographic recording in amorphous chalcogenide thin films
2003
A review of the recent advances and developments in the practical application of chalcogenide materials is presented, focusing special attention on holography and lithography using amorphous chalcogenide thin films.
<title>Dot-matrix holographic recording in amorphous chalcogenide films</title>
2006
We have developed PC controlled dot-matrix holographic recording system based on the CW diode pumped YAG:Nd SHG laser (wavelength 532 nm, power 30mW,) modulated electronically with TTL signals. Two-beam technique has been used with convergence angle 30o and PC controlled incident beam plane rotation 0-360o. Optical system consists of beam splitter, 40mm focus length forming cylindrical lens and 40mm focusing lens. Characteristic parameters of experimental equipment are following: spot size - 50-200 micrometers, direct laser writing area, limited by x-y positioning system, was 70mm x 70mm, number of writing head rotation positions up to 256 (8 bit), time of each exposure - 1-1000 msec. As th…