Search results for "CIRCUIT"
showing 10 items of 936 documents
Electrochemical impedance spectroscopy for studying passive layers on steel rebars immersed in alkaline solutions simulating concrete pores
2007
Present paper deals with the use of the electrochemical impedance spectroscopy to identify different processes in the passive layer growth over steel rebar surface immersed in an alkaline media simulating the concrete pore solution. Two cases have been considered: a passive layer spontaneously grown in a high alkaline media and a passive layer assisted by the application of an anodic potential in the same media. The application of electric equivalent circuits allows distinguishing between the different mechanisms occurring in this passive layer when grows in different conditions. An electric equivalent circuit with two RC loops connected in parallel is often used for fitting the EIS diagram…
Limits on the release of Rb isotopes from a zeolite based 83mKr calibration source for the XENON project
2011
The isomer 83mKr with its half-life of 1.83 h is an ideal calibration source for a liquid noble gas dark matter experiment like the XENON project. However, the risk of contamination of the detector with traces of the much longer lived mother isotop 83Rb (86.2 d half-life) has to be ruled out. In this work the release of 83Rb atoms from a 1.8 MBq 83Rb source embedded in zeolite beads has been investigated. To do so, a cryogenic trap has been connected to the source for about 10 days, after which it was removed and probed for the strongest 83Rb gamma-rays with an ultra-sensitive Germanium detector. No signal has been found. The corresponding upper limit on the released 83Rb activity means tha…
Colloidal Quantum Dot Integrated Light Sources for Plasmon Mediated Photonic Waveguide Excitation
2016
We operate micron-sized CdSe/CdS core–shell quantum dot (QD) clusters deposited onto gold patches as integrated light sources for the excitation of photonic waveguides. The surface plasmon mode launched by the QD fluorescence at the top interface of the gold patches are efficiently coupled to photonic modes sustained by titanium dioxide ridge waveguides. We show that, despite a large effective index difference, the plasmonic and the photonic modes can couple with a very high efficiency provided the vertical offset between the two kinds of waveguides is carefully controlled. Based on the effective index contrast of the plasmonic and the photonic modes, we engineer in-plane integrated hybrid …
Polymer solar cell based on ternary active layer consists of medium bandgap polymer and two non-fullerene acceptors
2020
Abstract An efficient PSCs consisting of a ternary active layer containing a medium bandgap conjugated polymer P and two well-known non-fullerene acceptors i.e. ITIC-m and Y6 was fabricated. An overall Power Conversion Efficiency (PCE) of about 15.13% was achieved, with the optimized ternary active layer consisting of 20 wt% of ITIC-m in acceptors i.e. P:ITIC-m:Y6 (1:0.3:1.2). This value is higher than that for the binary counter parts i.e. 12.10% and 13.16% for P:ITIC-m (1:1.5 w:w) and P:Y6 (1:1.5 w:w). The higher short circuit current density of the ternary active layer PSCs is related to the broader absorption spectra as compared to the binary active layer analogs. The open circuit volta…
Assigning ionic properties in perovskite solar cells; a unifying transient simulation/experimental study
2021
Kinetic modelling has proven to be essential to understand the time and spatial dependence of charge carriers in solar cells. Traditional drift–diffusion simulations have generally been employed to describe static steady-state conditions, whereas recently the transient counterpart has been able to reveal more detailed information regarding carrier kinetics. In addition to customary electron and hole dynamics, perovskite materials are known to also be strongly affected by the displacement of lattice vacancies, charged atoms or even entire molecules. Such ionic motion transpires on vastly different time scales compared to free charges and are generally not straightforward to simultaneously ac…
Tb/s switching fabrics for optical interconnects using heterointegration of plasmonics and silicon photonics: The FP7 PLATON approach
2010
We present recent work that is carried out within the FP7 project PLATON on novel Tb/s switch fabric architectures and technologies for optical interconnect applications, employing heterointegration of plasmonics, silicon photonics and electronics.
Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$
2020
This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …
Simulated and measured temperature coefficients in compensated silicon wafers and solar cells
2019
Abstract In this paper we perform a thorough investigation of the temperature coefficients of c-Si solar cells and wafers, based on both experimental data and device simulations. Groups of neighboring wafers were selected from different heights of four high performance multicrystalline silicon ingots cast using different dopants concentrations and Si feedstocks; Three different target resistivities of compensated silicon ingots based on Elkem Solar Silicon (ESS®), which are purified through a metallurgical route, and one non-compensated reference ingot. The wafers were processed into Al-BSF and PERCT type solar cells, as well as into lifetime samples subjected to selected solar cell process…
Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter
2021
In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized …
10 Gb/s transmission and thermo-optic resonance tuning in silicon-plasmonic waveguide platform
2011
The first system-level experimental results of hybrid Si-DLSPP structures incorporated into a SOI chip are reported. We demonstrate over 7nm thermo-optical tuning of a Si-Plasmonic racetrack-resonator and verify error-free 10Gb/s transmission through 60um Si-Plasmonic waveguide.