Search results for "CIRCUIT"
showing 10 items of 936 documents
Noise parameters of HEMTs: analysis of their properties from a circuit model approach
1996
Noise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key importance for the use of these devices for designing low‐noise amplifiers. Employs a simple noise model to derive the analytical expressions for the device noise parameters F0, Γ0 and N in terms of the electrical elements associated with the basic equivalent circuit of an HEMT. Analyses such expressions to establish some fundamental relationships, as well as the expected noise performance of the device when the parasitic elements representing package effects are included.
Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies
1998
Abstract This paper is focused on the performance of the noise resistance Rn of HEMTs at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of Rn.
Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures
1996
In analog signal processing at microwave frequencies the noise performance of active devices is of fundamental importance for the accurate design of low-noise amplifiers. To this aim, the determination of the four noise parameters F O , Γ O (complex variable) and Rn has to be accomplished together with the usual scattering parameter measurements vs. frequency. In addition, the dependence of the device performance vs. temperature is of interest for circuit applications characterized by harsh environmental conditions. In this work the noise behavior of high electron mobility transistors has been investigated by means of measurements and modeling in the 2-18 GHz frequency range and as a functi…
Analytical-Numerical Localization of Hidden Attractor in Electrical Chua’s Circuit
2013
Study of hidden oscillations and hidden chaotic attractors (basin of attraction of which does not contain neighborhoods of equilibria) requires the development of special analytical-numerical methods. Development and application of such methods for localization of hidden chaotic attractors in dynamical model of Chua’s circuit are demonstrated in this work.
Hidden attractors and multistability in a modified Chua’s circuit
2021
The first hidden chaotic attractor was discovered in a dimensionless piecewise-linear Chua’s system with a special Chua’s diode. But designing such physical Chua’s circuit is a challenging task due to the distinct slopes of Chua’s diode. In this paper, a modified Chua’s circuit is implemented using a 5-segment piecewise-linear Chua’s diode. In particular, the coexisting phenomena of hidden attractors and three point attractors are noticed in the entire period-doubling bifurcation route. Attraction basins of different coexisting attractors are explored. It is demonstrated that the hidden attractors have very small basins of attraction not being connected with any fixed point. The PSIM circui…
Necessary and sufficient conditions for frequency entrainment of quasi-sinusoidal injection-synchonised oscillators
1986
A method is presented which permits the first-approximation exact analysis of the dynamical stability of fundamental-mode injectionsynchronized oscillators (FISO's) characterized by a quasi-sinusoidal quasi-static behavior. By combining small parameter and stroboscopic transformation techniques, the phase-lock stability investigation of an nth-order system is reduced to the simple Hurwitz test on an nth degree polynomial easily obtainable from steady state describing quantities. On this basis, equations for critical locking are also derived, which demonstrate the existence of a pair of limit curves (Locus and Boundary) already conjectured and looked for in the past, but only with partial su…
A Comparison of Special Bonding Techniques for Transmission and Distribution Cables under Normal and Fault Conditions
2021
In this article, a review of the existing special bonding techniques for medium voltage and high-voltage cables is presented. Special bonding techniques have the purpose of reducing sheath currents, thereby limiting copper losses and the reduction of the ampacity of cables. The literature review shows various bonding techniques and how these have evolved over the years thanks to new technologies. Simulations of each technique are performed in MATLAB/Simulink, to compare their strengths and drawbacks both under normal conditions and in the presence of a single-line-to-ground fault.
A Portable Readout System for Microstrip Silicon Sensors (ALIBAVA)
2009
A readout system for microstrip silicon sensors has been developed. This system is able to measure the collected charge in one or two microstrip silicon sensors by reading out all the channels of the sensor(s), up to 256. The system can operate either with non-irradiated and irradiated sensors as well as with n-type and p-type microstrip silicon sensors. Heavily irradiated sensors will be used at the Super Large Hadron Collider, so this system can be used to research the performance of microstrip silicon sensors in conditions as similar as possible to the Super Large Hadron Collider operating conditions. The system has two main parts: a hardware part and a software part. The hardware part a…
A high resolution TDC subsystem
1994
A high resolution TDC subsystem was developed at the Institute for Nuclear Physics in Mainz. The TDC chip offers a time resolution of less than 300 ps and a programmable measurement range from O to 16 /spl mu/sec. The time measurement is done with a new, purely digital counting method. The chip can be operated in common start or common stop mode. In common start mode the chip is able to store up to 4 multiple hits per channel. The chip is used to build a transputer controlled subsystem for the measurement of the drift times of a vertical drift chamber. The design of the subsystem will be described and the first results from the tests of the prototype system will be presented. >
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…