Search results for "CMO"
showing 10 items of 145 documents
Magnetic Field Sensors Based on Giant Magnetoresistance (GMR) Technology: Applications in Electrical Current Sensing
2009
The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR), from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among o…
Synergistic Use of Electrochemical Impedance Spectroscopy and Photoelectrochemical Measurements for Studying Solid State Properties of Anodic HfO2
2017
Within the past years, intense research has been carried out on HfO2 as high k material, promising candidate to replace SiO2 as gate dielectric in CMOS based devices (1), and as metal oxide for resistive random access memory (ReRAM) (2). For both technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is strongly. Hafnia performance can be significantly influenced by carrier trapping taking place at pre-existing precursors states (induced by oxygen vacancies, interstitial ions, impurities acting as dopants), or by self-trapping in a perfect lattice, where the potential we…
Sub-mA current measurement by means of GMR sensors and state of the art lock-in amplifiers
2015
Electric current measurement at the range of μA in integrated circuit has been traditionally carried out by micro-electronically engineered systems, such as current mirrors or charging capacitors. However, off-line, i.e., non-intrusive methods provide advantages related to size and power consumption. In this sense, giant magnetoresistance (GMR) magnetic sensors are optimal due to their sensitivity and CMOS compatibility. In this work, we make use of specifically designed CMOS GMR-based current sensors in combination with a custom electronic interface based on a low-voltage low-power lock-in amplifier, demonstrating the capability of this combination for current measurement in the range of μ…
Optimum design of two-level MCML gates
2008
In this paper, we address the problem of the optimum design of two-level MOS Current Mode Logic (MCML) gates. In particular, we describe a design methodology based on the concept of crossing-point current already introduced for the optimum design of single-level MCML gates. This methodology is suited both for automated implementation and graphic estimate of the optimum design. Moreover, it clearly shows how some important design parameters affect the optimum values of delay and power consumption. Several gates were designed in an IBM 130 nm CMOS technology. The results of SPICE simulations, reported here, demonstrate the effectiveness of the proposed design methodology.
Low-Power Design of Delay Interpolating VCO
2008
In this paper, a design methodology for low-power MCML based delay interpolating VCOs is presented. The methodology allows a fast and accurate graphical evaluation of the optimum design. It utilizes two closed form expressions for the upper and lower oscillation frequencies of the VCO. An expression of the tuning range is also derived. The effectiveness of the proposed design methodology has been tested by simulating several VCOs in an IBM 0.13 mum CMOS technology.
Taking Advantage of Selective Change Driven Processing for 3D Scanning
2013
This article deals with the application of the principles of SCD (Selective Change Driven) vision to 3D laser scanning. Two experimental sets have been implemented: one with a classical CMOS (Complementary Metal-Oxide Semiconductor) sensor, and the other one with a recently developed CMOS SCD sensor for comparative purposes, both using the technique known as Active Triangulation. An SCD sensor only delivers the pixels that have changed most, ordered by the magnitude of their change since their last readout. The 3D scanning method is based on the systematic search through the entire image to detect pixels that exceed a certain threshold, showing the SCD approach to be ideal for this applicat…
Giant Magnetoresistance (GMR) sensors for 0.35µm CMOS technology sub-mA current sensing
2014
This paper reports on the design and fabrication of microelectronic structures for non-invasive indirect electric current sensing at the IC level. A 0.35 ?m CMOS ASIC has been specifically developed for this purpose. Then, a low temperature post-process, fully compatible with the CMOS technology, has been applied for depositing Giant Magnetoresistive (GMR) sensors. Preliminary experimental results for obtaining the sensitivity of the devices are presented. The detection limit is estimated to be about 5 ?A.
Bringing Plasmonics Into CMOS Photonic Foundries: Aluminum Plasmonics on Si$_{3}$N$_{4}$ for Biosensing Applications
2019
We present a technology platform supported by a new process design kit (PDK) that integrates two types of aluminum plasmonic waveguides with Si $_{3}$ N $_{4}$ photonics towards CMOS-compatible plasmo-photonic integrated circuits for sensing applications. More specifically, we demonstrate the fabrication of aluminum slot waveguide via e-beam lithography (EBL) on top of the Si $_{3}$ N $_{4}$ waveguide and an optimized fabrication process of aluminum plasmonic stripe waveguides within a CMOS foundry using EBL. Experimental measurements revealed a propagation length of 6.2 μm for the plasmonic slot waveguide in water at 1550 nm, reporting the first ever experimental demonstration of a plasmon…
CMOS-compatible nanoscale gas-sensor based on field effect
2009
The integration of a solid state gas sensor of the metal oxide sensor type into CMOS technology still is a challenge because of the high temperatures during metal oxide annealing and sensor operation that do not comply with silicon device stability. In the presence of an external electric field sensor sensitivity can be controlled through a change of the Fermi energy level and consequently it is possible to reduce the operation temperature. Based in this effect, a novel field effect gas sensor was developed resembling a reversed insulated : gate field effect transistor (IGFET) with the thickness of gas sensing layer in the range of the Debye length (L D ). Under these conditions the control…
Smart camera design for intensive embedded computing
2005
Computer-assisted vision plays an important role in our society, in various fields such as personal and goods safety, industrial production, telecommunications, robotics, etc. However, technical developments are still rare and slowed down by various factors linked to sensor cost, lack of system flexibility, difficulty of rapidly developing complex and robust applications, and lack of interaction among these systems themselves, or with their environment. This paper describes our proposal for a smart camera with real-time video processing capabilities. A CMOS sensor, processor and, reconfigurable unit associated in the same chip will allow scalability, flexibility, and high performance.